Enhanced Energy Storage Performance of Mn-Doped Nbt-Based Flexible Films by Defect Engineering
Lei Ning,Xia Luo,Ningning Sun,Yong Li,Pei Han,Xiaowei Li,Xihong Hao
DOI: https://doi.org/10.1016/j.jallcom.2024.177811
IF: 6.2
2024-01-01
Journal of Alloys and Compounds
Abstract:The rapid development of advanced flexible electronics leads to higher demands on the energy storage performance and spatial adaptability of capacitors. Here, Mn2+ is doped into 0.6(Na0.5Bi0.5)TiO3-0.4Bi(Mg0.5Zr0.5)O3 (0.6NBT-0.4BMZ), which effectively reduces the carrier content by forming defective complexes through the bonding of Mn2+ with oxygen vacancies, while maintaining a relatively high polarizability and enhancing the breakdown strength. The optimal storage performance is demonstrated by the 0.6NBT-0.4BMZ film with a Mn doping amount of 1mol%. The observed breakdown strength, storage density, and storage efficiency are 2,900kV/cm, 60.2J/cm3, and 60.3%, respectively. Furthermore, the films exhibit excellent stability in various temperature ranges (25~205 ℃), frequencies (1~5kHz), fatigue tests (at 107 charge/discharge cycles), and bending resistance tests (20,000 cycles/radius R ≈ 2mm). These results indicate that NBT-based film materials hold great promise for future flexible energy storage applications.