Abstract:High-energy-storage density capacitors with thin films of 0.5Bi(Ni1/2Ti1/2)O-3-0.5PbTiO(3) (BNT-PT) were fabricated by chemical solution deposition technique on Pt/Ti/SiO2/Si substrates. The dense thin films with pure-phase perovskite structure could be obtained by annealing at 750 degrees C. High capacitance density (similar to 1925nF/cm(2) at 1kHz) and extremely high-energy density (similar to 45.1J/cm(3)) under an electric field of 2250kV/cm were achieved at room temperature. The energy-storage density and efficiency varied little in a wide temperature range from -190 degrees C to 250 degrees C. The high-energy-storage density and good temperature stability make BNT-PT films promising candidates for high power electric applications.

High-energy-storage density capacitors of Bi (Ni 1/2 Ti 1/2) O 3- PbTiO 3 thin films with good temperature stability