Abstract:In this paper, we report high-speed ultrathin-body (3.5 nm) indium-tin-oxide (ITO) transistors using high-k HfLaO dielectrics with a thickness of 5 nm. Because of its low dielectric constant and large bandgap, ITO is a promising channel material for scaling below the 5 nm regime for advanced low-power electronics with excellent short-channel-immunity. Here, we fabricate sub-100-nm channel length ITO transistors with ultrahigh on/off ratio near 10 11 and ultralow off-state current below 10 fA/μm. The 15-nm-long ITO transistor exhibits high performance with the maximum on-state current of 970 μA/μm and peak g m of 400 μS/μm at V ds = 0.5 V. NAND, NOR, and SRAM based on enhancement/depletion mode (E/D) inverters have achieved full rail-to-rail output characteristics and stable memory function. Finally, We demonstrated a stage delay of 0.49 ns/stage for a 5-stage ring oscillator based on bootstrapped mode (BST) inverter, which is the best among all results based on metal-oxides transistors.

Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba 0.4 Sr 0.6 TiO 3 Dielectric

Fabrication and performance of indium oxide based transparent thin film transistors

Pentacene Thin-Film Transistors with Sol-Gel Derived Amorphous Ba0.6Sr0.4TiO3 Gate Dielectric

Fabrication of Indium-Tin-Oxide Thin-Film Transistor Using Anodization

Microporous SiO2 with Huge Electric-Double-layer Capacitance for Low-Voltage Indium Tin Oxide Thin-Film Transistors

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

Vertical Oxide Homojunction TFTs of 0.8 V Gated by $ \hbox{h}_{3}\hbox{po}_{4}$ -Treated $\hbox{sio}_{2}$ Nanogranular Dielectric

Low-Voltage Electric-Double-Layer TFTs on $ \hbox{SiO}_{2}$ -Covered Paper Substrates

BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with I on = 970 μA/μm and On/off Ratio Near 10 11 at V ds = 0.5 V

Transparent Junctionless Thin-Film Transistors with Tunable Operation Mode

Dual In-Plane-Gate Oxide-Based Thin-Film Transistors with Tunable Threshold Voltage

Beol Compatible 15-Nm Channel Length Ultrathin Indium-Tin-Oxide Transistors With I-On=970 Mu A/Mu M And On/Off Ratio Near 10(11) At V-Ds=0.5 V

BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with I<inf>on</inf> = 970 μA/μm and On/off Ratio Near 10<sup>11</sup> at V<inf>ds</inf> = 0.5 V

Low-voltage electric-double-layer TFTs on SiO2-covered paper substrates

In-Plane-Gate Indium-Tin-Oxide Thin-Film Transistors Self-Assembled on Paper Substrates

High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Low Leakage Current Vertical Thin-Film Transistors With InSnO-Stabilized ZnO Channel

Indium–Tin–Oxide Thin-Film Transistors with in Situ Anodized Ta 2 O 5 Passivation Layer

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors with Robust Thermal Stability at 400 $^{\circ}$ C and Downscaling of Channel