High Performance (vth ~ 0 V, SS ~ 69 Mv/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation
Dong-Qi Xiao,Bin-Bin Luo,Chun-Ming Huang,Wen Xiong,Xiaohan Wu,Shi-Jin Ding
DOI: https://doi.org/10.1109/ted.2022.3173249
IF: 3.1
2022-01-01
IEEE Transactions on Electron Devices
Abstract:Ultrathin indium oxide (InOx) films (≤5 nm), which are grown by plasma-enhanced (PE) atomic layer deposition (ALD) with (C2H5)2InCH3 and O2 plasma, are explored as channels of thin-film transistors (TFTs). First, we investigate the effects of channel thickness ( ${T}_{\text{ch}}$ ), channel length ( ${L}_{\text{ch}}$ ), and post-annealing conditions on the performance of TFTs with HfO2 gate dielectrics, respectively. The results indicate that superior overall performance can be achieved for the device with 2.5 nm ${T}_{\text{ch}}$ , $2 ~\mu \text{m} {L}_{\text{ch}}$ , and 8.5 nm HfO2 gate dielectric after annealing at 325 °C for 180 s in O2. Increasing the post-annealing temperature to 350 °C degrades the TFTs because of crystallization of HfO2 and outdiffusion of In element. Furthermore, with a PE chemical vapor-deposited SiO2 passivation layer on the back of the channel, the performance of the TFTs is significantly improved after post-annealing, especially at 300 °C for 1 h in air, such as near-zero-threshold voltage, a very small subthreshold slope (SS) of 69 mV/dec, a very high On/Off current ratio of ~1010, and relatively high field effect mobility of 17 cm2/ $\text{V}\cdot \text{s}$ . Finally, the positive and negative gate bias stress (NGBS) measurements of the devices also indicate that the SiO2 passivation layer can improve remarkably the NGBS stability. Thus, such a kind of device could be very promising for low-voltage and low-power applications.