10-nm Channel Length Indium-Tin-Oxide transistors with I-on=1860 mu A/mu m, G(m)=1050 mu S/mu m at V-ds=1 V with BEOL Compatibility

Shengman Li,Chengru Gu,Xuefei Li,Ru Huang,Yanqing Wu

DOI: https://doi.org/10.1109/IEDM13553.2020.9371966

2020-01-01

Abstract:In this paper, we successfully realized a shortest 10-nm channel length transistor based on ultrathin 3.5-nm indium tin oxide channel. Using 5-nm lanthanum-doped hafnium oxide (HfLaO) high-kappa dielectric, the 10-nm channel ultrathin device architecture with wide bandgap exhibits excellent switching behavior with on/off ratio exceeding 10(10) and ultralow leakage current of 40 fA/mu m. Record-high on-state current of 1860 mu A/mu m and transconductance (g(m)) of more than 1000 mu S/mu m have been achieved, benefited from a rather small contact resistance of 162 Omega.mu m. R-on of the 10-nm ITO transistor was smaller than 500 Omega.mu m. Adopting the MIT Virtual Source (MVS) model, we extracted the saturation injection velocity nu(x0) up to 8.8x10(6) cm/s and the resulting mean free path lambda(mfp) of ITO transistor is 21.6 nm. Radio frequency transistor with 30-nm-long channel exhibited record high radio-frequency (RF) performance with small-signal current gain (f(T)) of 20 GHz and maximum oscillation frequency (f(max)) of 13 GHz. These two metrics contribute to root((f(T) x f(max)) exceeding 15 GHz, confirming overwhelming superiority compared to RF transistors based on other ultrathin novel channel materials such as MoS2, BP and metal-oxides. Finally, we employed bootstrapped mode (BST) inverters to fabricate a 5-stage ring oscillator, and achieved the record-low propagation delay of 0.4 ns/stage among metal-oxides.