Abstract:In this paper, we successfully realized a shortest 10-nm channel length transistor based on ultrathin 3.5-nm indium tin oxide channel. Using 5-nm lanthanum-doped hafnium oxide (HfLaO) high- κ dielectric, the 10- nm channel ultrathin device architecture with wide bandgap exhibits excellent switching behavior with on/off ratio exceeding 1010 and ultra-low leakage current of 40 fA/μm. Record-high on-state current of 1860 μA/μm and transconductance (g m ) of more than 1000 μS/μm have been achieved, benefited from a rather small contact resistance of 162 Ω•μm. R on of the 10-nm ITO transistor was smaller than 500 Ω•μm. Adopting the MIT Virtual Source (MVS) model, we extracted the saturation injection velocity ν x0 up to 8.8 × 106 cm/s and the resulting mean free path λ mfp of ITO transistor is 21.6 nm. Radio frequency transistor with 30-nm-long channel exhibited record high radio-frequency (RF) performance with small-signal current gain (f T ) of 20 GHz and maximum oscillation frequency (f max ) of 13 GHz. These two metrics contribute to $\\sqrt {\\left( {{f_T} \\times {f_{\\max }}} \\right)} $ exceeding 15 GHz, confirming overwhelming superiority compared to RF transistors based on other ultrathin novel channel materials such as MoS 2 , BP and metal-oxides. Finally, we employed bootstrapped mode (BST) inverters to fabricate a 5-stage ring oscillator, and achieved the record-low propagation delay of 0.4 ns/stage among metal-oxides.

P‐1.12: Sub‐200nm Nano‐scale Indium‐Zinc‐Oxide Ultra‐thin Channel Transistors

Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating

Indium Zinc Oxide Nanosheet Transistor with 2 nm Channel Thickness for Monolithic Three-dimensional Integrated Circuit

High-performance nano-scale InSnO transistors

P‐1.14: Effects of Active Layer Thickness on Performance of InZnO Transistors

10-nm Channel Length Indium-Tin-Oxide transistors with I on = 1860 μA/μm, G m = 1050 μS/μm at V ds = 1 V with BEOL Compatibility

Beol Compatible 15-Nm Channel Length Ultrathin Indium-Tin-Oxide Transistors With I-On=970 Mu A/Mu M And On/Off Ratio Near 10(11) At V-Ds=0.5 V

10-nm Channel Length Indium-Tin-Oxide transistors with I-on=1860 mu A/mu m, G(m)=1050 mu S/mu m at V-ds=1 V with BEOL Compatibility

Scaled indium oxide transistors fabricated using atomic layer deposition

Nanometre-thin Indium Tin Oxide for Advanced High-Performance Electronics

BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with I on = 970 μA/μm and On/off Ratio Near 10 11 at V ds = 0.5 V

Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Sub-1.2 nm Equivalent Oxide Thickness

BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with I<inf>on</inf> = 970 μA/μm and On/off Ratio Near 10<sup>11</sup> at V<inf>ds</inf> = 0.5 V

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

Fabrication and performance of indium oxide based transparent thin film transistors

Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

Zinc Oxide Nanowire Networks for Macroelectronic Devices

Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length

Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V)