Abstract:In this work, a surface engineering method is proposed to boost electrical performance and stability of the InAlZnO (IAZO) transistors, of which an Al modification layer is deposited on surface of the IAZO channel layer. Through analysed by transmission electron microscope and X-ray photoelectron spectroscopy, the IAZO thin film with Al modification layer undergoes a reduction reaction to generate more oxygen vacancies. Hall effects measurement further demonstrates that IAZO thin films with Al modification layer exhibit higher carrier concentrations than the ones without Al modification layer. The IAZO transistors with Al modification layer exhibit better performance and stability, including a field-effect mobility of 4.36 cm2 V−1s−1 (an improvement of about three-fold), a small subthreshold swing of 105.23 mV/decade, a high on-to-off current ratio greater than 107, and a threshold voltage shift of less than 0.50 V under positive and negative gate bias stress. Moreover, the IAZO transistors with Al modification layer demonstrate high thermal stability under 400 °C for 120 min in air atmosphere. Based on this method, the IAZO inverters have been implemented with high voltage gain of 87.55 V/V. This surface engineering technology paves the way for application of high-performance oxide transistors for advanced monolithic three-dimensional integration.

P‐1.14: Effects of Active Layer Thickness on Performance of InZnO Transistors

P‐1.12: Sub‐200nm Nano‐scale Indium‐Zinc‐Oxide Ultra‐thin Channel Transistors

Investigation of width-to-length ratio on the performance of ZnO transistors and inverters

Study of zinc tin oxide thin-film transistor

Investigation of W/L Ratio on the Performance of ZnO Transistors and Inverters

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

Influence of the Channel Layer Thickness on Electrical Properties of Indium Zinc Oxide Thin-Film Transistor

Impact of layer thickness on the operating characteristics of In2O3/ZnO heterojunction thin-film transistors

Effect of Al Doping on Performance of ZnO Thin Film Transistors

High performance IZO:P/IZO:Ni thin film transistor with double active layers

Effect of active layer thickness on device performance of a-LZTO thin-film transistors

Back-End-of-Line Compatible InSnO/ZnO Heterojunction Thin-Film Transistors With High Mobility and Excellent Stability

Al Modification Layer Method for Enhancing InAlZnO Transistors

P‐1.8: High Performance Amorphous IZO/IGZO Bilayer Thin Film Transistors for Ink‐jet Printed AMOLED Displays

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

Effect of Sc2O3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors

The Influence of Channel Layer Thickness on the Electrical Properties of Zno Tfts

P‐1.7: Atomic‐Layer‐Deposition Deposited Superlattice‐Structure Al‐Zn‐O Films for Thin Film Transistors Application

Effect of Sc 2 O 3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors

Performances of Transparent Indium Zinc Oxide Thin Film Transistors Using ZrO2 As Dielectric Processed by Solution Method

Influence of Double Channel Layers on the Performance of Nitrogen Doped Indium-zinc-oxide Thin Film Transistors