Study of zinc tin oxide thin-film transistor

Xiong Wang,Cai Xi-Kun,Yuan Zi-Jian,Zhu Xia-Ming,Qiu Dong-Jiang,Wu Hui-Zhen
DOI: https://doi.org/10.7498/aps.60.037305
2011-01-01
Abstract:Thin film transistors with zinc tin oxide as the active channel layer were fabricated on ITO glass by rf magnetron sputtering. SiO 2 gate dielectric was grown using plasma-enhanced chemical vapor deposition (PECVD). These devices operate with a maximum field effect mobility of 9.1 cm 2/V · s, threshold voltage of -2 V, and current on/off ratio of 10 4. © 2011 Chinese Physical Society.
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