Abstract:Owing to their many intriguing properties, transparent metal oxide semiconductors have become the most attractive alternatives for silicon-based semiconductors widely used today and been widely investigated by researchers. However, most of high performance metal oxide thin film transistor (TFT) relied on vacuum processing equipment and expensive rare element indium in the manufacturing process, the need for developing low cost indium-free metal oxide TFT has become urgent. In this work, a bilayer TFT composed of ZnO nanoparticles (NPs)/SnO2 was prepared by solution method. In this device structure, SnO2 film can provide high conductivity and carrier mobility, while the ZnO NPs in the upper layer can modulate and control channel conductance and further protect SnO2 film from air environment. The obtained device exhibits the excellent performances including mu FE of 22.9 cm2V- 1s- 1 and Ion/Ioff about 1 x 107, subthreshold swing (SS) value about 0.36 V dec-1, and excellent environmental stability have been effectively achieved. Furthermore, the performance enhancement mechanism for the bilayer transistor with the help of simulation and related experiments was further explored. The bilayer ZnO NPs/SnO2 TFT has great cost advantage compared with indium based metal oxide TFTs and exhibits excellent potential in low cost thin-film electronic devices.

Solution-Processed Zinc Oxilde Thin Films and Top-Gate Thin Film Transistors

Solution-processed zinc oxide thin films and top-gate thin film transistors

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Study of zinc tin oxide thin-film transistor

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Full-solution-processed High Mobility Zinc-Tin-oxide Thin-Film-transistors

High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process

Fabrication of Zinc Oxide Thin Film Transistors via Low-Temperature Solution Processing

Performance Enhancement of Solution-Processed InZnO Thin-Film Transistors by Al Doping and Surface Passivation

Enhancement of electrical properties of solution-processed oxide thin film transistors using ZrO<sub>2</sub> gate dielectrics deposited by an oxygen-doped solution

Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors Based On Anodized Aluminum Oxide Gate Insulator Modified With Zirconium Oxide

Solution Processed Thin-Film Transistors with Bilayer Channel Consisting of ZnO Nanoparticles and SnO2

Top-gate Zinc-Tin-oxide Thin-Film Transistors Based on Organic Gate Insulator

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

The Fabrication of Thin Film Transistors with ZnO As Active Channel Layer

Structural and Optical Characteristics of Titanium-Doped Zinc Oxide Thin Films and Applications in Thin Film Transistors

High Mobility Thin-Film Transistor with Solution-Processed Hafnium-Oxide Dielectric and Zinc-Indium-Tin-Oxide Semiconductor

Non-aqueous solution processed ZnO thin film transistors

Combustion-Solution Processed Amorphous ZnTiSnO Thin Films and Performances as Thin-Film Transistors

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns