Abstract:This study investigated the effect of hydrogen (H) on the performance of amorphous In-Ga-Zn-Sn oxide (a-In0.29Ga0.35Zn0.11Sn0.25O) thin-film transistors (TFTs). Ample H in plasma-enhanced atomic layer deposition (PEALD)-derived SiO2 can diffuse into the underlying a-IGZTO film during the postdeposition annealing (PDA) process, which affects the electrical properties of the resulting TFTs due to its donor behavior in the a-IGZTO. The a-In0.29Ga0.35Zn0.11Sn0.25O TFTs at the PDA temperature of 400 °C exhibited a remarkably higher field-effect mobility (μFE) of 85.9 cm2/Vs, a subthreshold gate swing (SS) of 0.33 V/decade, a threshold voltage (VTH) of -0.49 V, and an ION/OFF ratio of ∼108; these values are superior compared to those of unpassivated a-In0.29Ga0.35Zn0.11Sn0.25O TFTs (μFE = 23.3 cm2/Vs, SS = 0.36 V/decade, and VTH = -3.33 V). In addition, the passivated a-In0.29Ga0.35Zn0.11Sn0.25O TFTs had good stability against the external gate bias duration. This performance change can be attributed to the substitutional H doping into oxygen sites (HO) leading to a boost in ne and μFE. In contrast, the beneficial HO effect was barely observed for amorphous indium gallium zinc oxide (a-IGZO) TFTs, suggesting that the hydrogen-doping-enabled boosting of a-IGZTO TFTs is strongly related to the existence of Sn cations. Electronic calculations of VO and HO using density functional theory (DFT) were performed to explain this disparity. The introduction of SnO2 in a-IGZO is predicted to cause a conversion from shallow VO to deep VO due to the lower formation energy of deep VO, which is effectively created around Sn cations. The formation of HO by H doping in the IGZTO facilitates the efficient connection of atomic states forming the conduction band more smoothly. This reduces the effective mass and enhances the carrier mobility.

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Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

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Full-solution-processed High Mobility Zinc-Tin-oxide Thin-Film-transistors

Solution-Processed Zinc Oxilde Thin Films and Top-Gate Thin Film Transistors

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Solution-processed zinc oxide thin films and top-gate thin film transistors

Improvement of the Long-Term Stability of ZnSnO Thin Film Transistors by Tungsten Incorporation Using a Solution-Process Method

High Mobility Thin-Film Transistor with Solution-Processed Hafnium-Oxide Dielectric and Zinc-Indium-Tin-Oxide Semiconductor

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Enhancement of electrical properties of solution-processed oxide thin film transistors using ZrO<sub>2</sub> gate dielectrics deposited by an oxygen-doped solution

Improvement of solution-processed Zn-Sn-O active-layer thin film transistors by novel high valence Mo doping

Thin-film Transistors Based on Poly(3,3‴-Dialkyl-quarterthiophene) and Zinc Oxide Nanowires with Improved Ambient Stability

High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process

High-mobility InSnZnO Thin Film Transistors via Introducing Water Vapor Sputtering Gas

Enhancing the Stability and Mobility of TFTs via Indium-Tungsten Oxide and Zinc Oxide Engineered Heterojunction Channels Annealed in Oxygen Ambient

Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors

High-mobility Solution-Processed Tin Oxide Thin-Film Transistors with High-Κ Alumina Dielectric Working in Enhancement Mode.

Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways.

A Study of Deposition/Annealing Cyclic Method to Enhance the Performance of Zinc-Tin Oxide Thin-Film Transistor by Ultrasonic Spray Pyrolysis Deposition