Abstract:High-performance ZnO thin-film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) with a maximum temperature of 200 °C. The impacts of deposition and annealing temperature on the characteristics of devices were discussed. ZnO thin films show a (002) preferred orientation at the high growth temperature. The carrier concentrations of ZnO TFTs can be optimized by appropriate growth temperature and annealing treatments. Subthreshold swing (SS) and hysteresis windows of TFTs are improved after annealing in dry O<sub>2</sub> due to the reduction in traps at ZnO/SiO<sub>2</sub> interface or/and within the ZnO channel. The ZnO TFT deposited at 150 °C with 200 °C annealing in oxygen demonstrates excellent electrical characteristics with high saturation mobility <inline-formula> <tex-math notation="LaTeX">$\mu _{\text {sat}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$7.8 {\mathrm {cm}}^{\text {2}}\text{V}^{-\text {1}}\text{s}^{-\text {1}}$ </tex-math></inline-formula>, small SS of 127 mV/decade, high <inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$2.8 \times 10^{\text {9}}$ </tex-math></inline-formula>, and good contact between source/drain electrodes. The high-performance ZnO TFTs with low processing temperatures have great potential in application for flexible electronics.

A Study of Deposition/Annealing Cyclic Method to Enhance the Performance of Zinc-Tin Oxide Thin-Film Transistor by Ultrasonic Spray Pyrolysis Deposition

Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

Study of zinc tin oxide thin-film transistor

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid

Effects of Growth Temperature and Annealing on Properties of Zn3sn2o7 Thin Films and Application in Tfts

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

ZnSnO thin-film transistors by reactive co-sputtering of Zn and Sn metal targets

High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Defect Modification in Zninsno Transistor with Solution-Processed Al2o3 Dielectric by Annealing

Performance Optimization of Atomic Layer Deposited ZnO Thin-Film Transistors by Vacuum Annealing

Solution-Processed Zinc Oxilde Thin Films and Top-Gate Thin Film Transistors

High performance of ZnSnO thin-film transistors engineered by oxygen defect modulation

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

Study on the Optimization of Cu-Zn-Sn-O to Prepare Cu2ZnSnS4 Thin Film via a Nano Ink Coating Method

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

Enhancement of Two-Step Low-Temperature Annealing Treatment on Electrical Performance of In-Sn-O Thin-Film Transistors

Performance enhancement of ATZO TFTs by component control and post treatment

Enhanced Mobility Of Solution-Processed Polycrystalline Zinc Tin Oxide Thin-Film Transistors Via Direct Incorporation Of Water Into Precursor Solution