Abstract:High-performance ZnO thin-film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) with a maximum temperature of 200 °C. The impacts of deposition and annealing temperature on the characteristics of devices were discussed. ZnO thin films show a (002) preferred orientation at the high growth temperature. The carrier concentrations of ZnO TFTs can be optimized by appropriate growth temperature and annealing treatments. Subthreshold swing (SS) and hysteresis windows of TFTs are improved after annealing in dry O<sub>2</sub> due to the reduction in traps at ZnO/SiO<sub>2</sub> interface or/and within the ZnO channel. The ZnO TFT deposited at 150 °C with 200 °C annealing in oxygen demonstrates excellent electrical characteristics with high saturation mobility <inline-formula> <tex-math notation="LaTeX">$\mu _{\text {sat}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$7.8 {\mathrm {cm}}^{\text {2}}\text{V}^{-\text {1}}\text{s}^{-\text {1}}$ </tex-math></inline-formula>, small SS of 127 mV/decade, high <inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$2.8 \times 10^{\text {9}}$ </tex-math></inline-formula>, and good contact between source/drain electrodes. The high-performance ZnO TFTs with low processing temperatures have great potential in application for flexible electronics.

Performance enhancement of ATZO TFTs by component control and post treatment

High-Performance Al–Sn–Zn–O Thin-Film Transistor with a Quasi-Double-Channel Structure

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Effect of Al Doping on Performance of ZnO Thin Film Transistors

High performance of ZnSnO thin-film transistors engineered by oxygen defect modulation

High-performance Fully Transparent Al–Sn–Zn–O Thin-Film Transistors Using Double-Channel Structures

Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

High Performance Ti-Doped ZnO TFTs with AZO/TZO Heterojunction S/D Contacts

Performance Enhancement of Fully Transparent Tin-Doped Zinc Oxide Thin-Film Transistors Fabricated by Sputtering at Low Temperature

Performance Optimization of Atomic Layer Deposited ZnO Thin-Film Transistors by Vacuum Annealing

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT

High-performance Al-Zn-O Thin-Film Transistors Sputtering at Different Power

Amorphous ZnAlSnO Thin-Film Transistors by a Combustion Solution Process for Future Displays

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air

Enhanced Stability Performance of Transparent Ozone ALD ZnO Thin-Film Transistors with SiAlO X Dielectric

Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy

The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering