Abstract:Thin film transistor (TFT) with low cost and high performance is significantly important for practical applications. In this work, In-free ZnSnO (ZTO) TFT with high performance is achieved by modulating the annealing atmosphere to manipulate the amount and charge state of oxygen defect, and then the effects of annealing atmosphere are systematically investigated by experiment and theoretical calculation. Results show that, O2 condition results in an inferior electron mobility although the formation of oxygen defect is suppressed. The oxygen vacancies created in N2 ambience are most probably dominated by neutral ones that limit the electron transport. The ZTO TFT dealt with vacuum condition exhibits the best performances, i.e. μlin, Vth, SS and Ion/Ioff are 19.80 cm2/Vs, 0.05 V, 0.46 V/dec and 108, respectively, which can be attributed to the cooperation of the decreased RC and RSH, the charge-state transition of oxygen defect. Further investigation indicates that, doubly charged oxygen vacancy not only results in the elevation of electron content and thus reduce the conduction barrier, but also shrinks the supercell volume to maintain the highly dispersed conduction band, which is crucially important for the electron transport. The findings may facilitate the ability to engineer other high performance AOS materials and devices.

ZnSnO thin-film transistors by reactive co-sputtering of Zn and Sn metal targets

Study of zinc tin oxide thin-film transistor

High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process

Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc Target

Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors

High performance of ZnSnO thin-film transistors engineered by oxygen defect modulation

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Low Temperature and High Performance ZnSnO Thin Film Transistors Engineered by In-Situ Thermal Manipulation

In-Situ Fluorine-Doped Znsno Thin Film and Thin-Film Transistor

Fabrication And Characteristics Of Zno-Based Thin Film Transistors

Solution-based SnGaO thin-film transistors for Zn- and In-free oxide electronic devices

High Performance Rf Sputtering Deposited Zno Thin-Film Transistors

Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor with Source/Drain Regions Doped by Al Reaction

Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy

Analysis of Low Frequency Noise in in Situ Fluorine-Doped ZnSnO Thin-Film Transistors

A Study of Deposition/Annealing Cyclic Method to Enhance the Performance of Zinc-Tin Oxide Thin-Film Transistor by Ultrasonic Spray Pyrolysis Deposition

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

High performance reactive sputtering deposited ZnO thin-film transistors on transparent substrate

Sn-Doped Zno Thin-Film Transistors with Azo, Tzo and Al Heterojunction Source/Drain Contacts

Ultrathin Amorphous ZnGexSnO Films for High Performance Ultra-Thin-film Transistors