Abstract:High-performance ZnO thin-film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) with a maximum temperature of 200 °C. The impacts of deposition and annealing temperature on the characteristics of devices were discussed. ZnO thin films show a (002) preferred orientation at the high growth temperature. The carrier concentrations of ZnO TFTs can be optimized by appropriate growth temperature and annealing treatments. Subthreshold swing (SS) and hysteresis windows of TFTs are improved after annealing in dry O<sub>2</sub> due to the reduction in traps at ZnO/SiO<sub>2</sub> interface or/and within the ZnO channel. The ZnO TFT deposited at 150 °C with 200 °C annealing in oxygen demonstrates excellent electrical characteristics with high saturation mobility <inline-formula> <tex-math notation="LaTeX">$\mu _{\text {sat}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$7.8 {\mathrm {cm}}^{\text {2}}\text{V}^{-\text {1}}\text{s}^{-\text {1}}$ </tex-math></inline-formula>, small SS of 127 mV/decade, high <inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$2.8 \times 10^{\text {9}}$ </tex-math></inline-formula>, and good contact between source/drain electrodes. The high-performance ZnO TFTs with low processing temperatures have great potential in application for flexible electronics.

Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc Target

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors

ZnSnO thin-film transistors by reactive co-sputtering of Zn and Sn metal targets

High-performance Si-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

High-performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition at Low Temperature

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

P‐1.8: High Performance ZnO Thin Film Transistors on Flexible Substrate with Process Temperature No More Than 100 °C

High Performance Rf Sputtering Deposited Zno Thin-Film Transistors

Fabrication And Characteristics Of Zno-Based Thin Film Transistors

High performance reactive sputtering deposited ZnO thin-film transistors on transparent substrate

High-performance Ti-doped zinc oxide TFTs with double-layer gate dielectric fabricated at low temperature

High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates with a Maximum Process Temperature of 100 °C

Low Temperature and High Performance ZnSnO Thin Film Transistors Engineered by In-Situ Thermal Manipulation

Performance Enhancement of Fully Transparent Tin-Doped Zinc Oxide Thin-Film Transistors Fabricated by Sputtering at Low Temperature

Al-Doped Zno Thin-Film Transistors on Flexible Plastic Substrate

Flexible Nickel-Doped Zinc Oxide Thin-Film Transistors Fabricated On Plastic Substrates At Low Temperature

P‐1.11: High‐mobility ZnO thin‐film transistors with HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer dielectric