Abstract:High-performance ZnO thin-film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) with a maximum temperature of 200 °C. The impacts of deposition and annealing temperature on the characteristics of devices were discussed. ZnO thin films show a (002) preferred orientation at the high growth temperature. The carrier concentrations of ZnO TFTs can be optimized by appropriate growth temperature and annealing treatments. Subthreshold swing (SS) and hysteresis windows of TFTs are improved after annealing in dry O<sub>2</sub> due to the reduction in traps at ZnO/SiO<sub>2</sub> interface or/and within the ZnO channel. The ZnO TFT deposited at 150 °C with 200 °C annealing in oxygen demonstrates excellent electrical characteristics with high saturation mobility <inline-formula> <tex-math notation="LaTeX">$\mu _{\text {sat}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$7.8 {\mathrm {cm}}^{\text {2}}\text{V}^{-\text {1}}\text{s}^{-\text {1}}$ </tex-math></inline-formula>, small SS of 127 mV/decade, high <inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$2.8 \times 10^{\text {9}}$ </tex-math></inline-formula>, and good contact between source/drain electrodes. The high-performance ZnO TFTs with low processing temperatures have great potential in application for flexible electronics.

Fabrication And Characteristics Of Zno-Based Thin Film Transistors

High Performance Rf Sputtering Deposited Zno Thin-Film Transistors

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

High performance reactive sputtering deposited ZnO thin-film transistors on transparent substrate

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Fabrication and performance of indium oxide based transparent thin film transistors

Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Study of zinc tin oxide thin-film transistor

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

Performance Enhancement of Fully Transparent Tin-Doped Zinc Oxide Thin-Film Transistors Fabricated by Sputtering at Low Temperature

High-performance Si-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

Transparent Thin-Film Transistors Using ZnMgO as Dielectrics and Channel

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

Transparent Thin-Film Transistors Based on c-Axis Oriented, Verti cally Aligned ZnO Nanorod Arrays via Solution Pro cessing

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

In-Situ Fluorine-Doped Znsno Thin Film and Thin-Film Transistor

Flexible Nickel-Doped Zinc Oxide Thin-Film Transistors Fabricated On Plastic Substrates At Low Temperature