Low Temperature and High Performance ZnSnO Thin Film Transistors Engineered by In-Situ Thermal Manipulation

Wengao Pan,Xiaoliang Zhou,Qingping Lin,Jie Chen,Lei Lu,Shengdong Zhang

DOI: https://doi.org/10.1039/d1tc05651d

IF: 6.4

2022-01-01

Journal of Materials Chemistry C

Abstract:We report the low temperature and high performance of ZnSnO (ZTO) TFT via in situ thermal manipulation strategy, and further reveal the underlying mechanisms.

What problem does this paper attempt to address?

High performance of ZnSnO thin-film transistors engineered by oxygen defect modulation

Wengao Pan,Xiaoliang Zhou,Ying Li,Wenting Dong,Lei Lu,Shengdong Zhang

DOI: https://doi.org/10.1016/j.mssp.2022.106998

IF: 4.1

2022-11-15

Materials Science in Semiconductor Processing

Abstract:Thin film transistor (TFT) with low cost and high performance is significantly important for practical applications. In this work, In-free ZnSnO (ZTO) TFT with high performance is achieved by modulating the annealing atmosphere to manipulate the amount and charge state of oxygen defect, and then the effects of annealing atmosphere are systematically investigated by experiment and theoretical calculation. Results show that, O2 condition results in an inferior electron mobility although the formation of oxygen defect is suppressed. The oxygen vacancies created in N2 ambience are most probably dominated by neutral ones that limit the electron transport. The ZTO TFT dealt with vacuum condition exhibits the best performances, i.e. μlin, Vth, SS and Ion/Ioff are 19.80 cm2/Vs, 0.05 V, 0.46 V/dec and 108, respectively, which can be attributed to the cooperation of the decreased RC and RSH, the charge-state transition of oxygen defect. Further investigation indicates that, doubly charged oxygen vacancy not only results in the elevation of electron content and thus reduce the conduction barrier, but also shrinks the supercell volume to maintain the highly dispersed conduction band, which is crucially important for the electron transport. The findings may facilitate the ability to engineer other high performance AOS materials and devices.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Low-temperature and high-performance ZnSnO thin film transistor activated by lightwave irradiation

Qian Zhang,Cheng Ruan,Hongyu Gong,Guodong Xia,Sumei Wang

DOI: https://doi.org/10.1016/j.ceramint.2021.04.050

IF: 5.532

2021-07-01

Ceramics International

Abstract:Ultra-high-resolution and flexible display applications require high-performance oxide thin film transistors (TFTs) fabricated at low temperatures. This study fabricated low-temperature and solution-processed high-mobility ZnSnO (ZTO) thin films and TFTs by a lightwave-activation annealing process. The effect of Sn content on the microstructures and electrical properties of lightwave-activated ZTO (LW-ZTO) films and TFTs was investigated. The lightwave-activation process triggered the efficient decomposition of chloride-based precursors and enhanced the performance of ZTO TFTs at a low temperature (230 °C). The optimized ZTO TFTs exhibited excellent electrical properties, including a high saturation mobility of 45.1 cm2/Vs and an on-current/off-current ratio of 105-106 at a low operating voltage of 3 V. Furthermore, the LW-ZTO devices demonstrated high operational stability with a small Vth shift of 0.231 V under bias stress for 5400 s. The performance of the ZTO TFTs was attributed to the low-temperature lightwave-activation process, stemming from the synergic effects of light and heat. These promising results highlight the potential applications of low-temperature lightwave-activated oxide transistors in next-generation cost-effective and low-power flexible electronics.

materials science, ceramics
Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Xiaoli Xu,Linrun Feng,Shasha He,Yizheng Jin,Xiaojun Guo

DOI: https://doi.org/10.1109/led.2012.2210853

IF: 4.8157

2012-01-01

IEEE Electron Device Letters

Abstract:Bottom-gate top-contact zinc oxide (ZnO) thin-film transistors were fabricated with a low annealing temperature (150 °C) using ammine-hydroxo zinc precursors. The unpassivated devices present profound hysteresis in the measured current-voltage characteristics and a negative output conductance, which were attributed to the interaction of back surface with the oxygen molecules in the ambient atmosphere. To suppress the ambient influence without impacting the device's intrinsic performance, a simple low-temperature (75 °C ) solution-based passivation approach with polydimethylsiloxane was developed. The passivated devices present typical field-effect transistor behaviors of greatly improved device performance.
High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Junchen Dong,Xing Zhang,Zhuang Yi,Huijin Li,Shengdong Zhang,Dedong Han,Yi Wang

DOI: https://doi.org/10.1109/TED.2019.2915625

IF: 3.1

2019-05-24

IEEE Transactions on Electron Devices

Abstract:High-performance ZnO thin-film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) with a maximum temperature of 200 °C. The impacts of deposition and annealing temperature on the characteristics of devices were discussed. ZnO thin films show a (002) preferred orientation at the high growth temperature. The carrier concentrations of ZnO TFTs can be optimized by appropriate growth temperature and annealing treatments. Subthreshold swing (SS) and hysteresis windows of TFTs are improved after annealing in dry O2 due to the reduction in traps at ZnO/SiO2 interface or/and within the ZnO channel. The ZnO TFT deposited at 150 °C with 200 °C annealing in oxygen demonstrates excellent electrical characteristics with high saturation mobility <inline-formula> <tex-math notation="LaTeX">$\mu _{\text {sat}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$7.8 {\mathrm {cm}}^{\text {2}}\text{V}^{-\text {1}}\text{s}^{-\text {1}}$ </tex-math></inline-formula>, small SS of 127 mV/decade, high <inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$2.8 \times 10^{\text {9}}$ </tex-math></inline-formula>, and good contact between source/drain electrodes. The high-performance ZnO TFTs with low processing temperatures have great potential in application for flexible electronics.

Materials Science,Engineering,Physics
High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process

Yunlong Zhao,Lian Duan,Guifang Dong,Deqiang Zhang,Juan Qiao,Liduo Wan,Yong Qiu

DOI: https://doi.org/10.1021/la304581c

IF: 3.9

2012-01-01

Langmuir

Abstract:Films of zinc tin oxide (ZTO), grown from solutions with zinc acetate dehydrate and tin(II) 2-ethylhexanoate dissolved in 2-methoxyethanol, have been used to fabricate thin-film transistors in combination with solution-processed aluminum oxide as the gate insulator. And the nonhomogeneity of the single-layer ZTO films, caused by both ZTO film-substrate interaction and surface crystallization, has been studied, which is essential to achieve high performance transistors. In the bottom-contact thin-film transistor based on a Sn-rich layer of ZTO, a high mobility of 78.9 cm(2) V(-1) s(-1) in the saturation region has been obtained, with an on-to-off current ratio of 10(5) and a threshold gate voltage of 1.6 V.
Analysis of Low Frequency Noise in in Situ Fluorine-Doped ZnSnO Thin-Film Transistors

Xuemei Yin,Yayi Chen,Guoyuan Li,Wei Zhong,Sunbin Deng,Lei Lu,Guijun Li,Hoi Sing Kwok,Rongsheng Chen

DOI: https://doi.org/10.1063/5.0048125

IF: 1.697

2021-01-01

AIP Advances

Abstract:We report on in situ fluorine-doped ZnSnO (ZTO:F) thin-film transistors (TFTs) fabricated by co-sputtering. The low frequency noise (LFN) characteristics of ZTO:F TFTs under different annealing temperatures and FSnO (FTO) deposition powers are comparatively studied for the first time. The results show that ZTO:F TFTs have the best electrical and LFN characteristics under an FTO deposition power of 25 W and an annealing temperature of 350 °C, while the saturated field effect mobility was measured to be 14.0 cm2 V−1 s−1, the switching current ratio is over 109, and the Hooge parameter is about 10−2 without any passivation. ZTO:F TFTs without rare metals have the potential for low-cost and environmentally safe manufacturing.
Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc Target

Shaojuan Li,Yong Cai,Dedong Han,Yi Wang,Lei Sun,Mansun Chan,Shengdong Zhang

DOI: https://doi.org/10.1109/ted.2012.2205151

2012-01-01

Abstract:A low-temperature metallic-zinc-target reactive sputtering technology is used to fabricate a ZnO thin-film transistor (TFT). The effect of the $\hbox{O}_{2}/\hbox{Ar}$ flow rate ratio on the performance of the resulting TFTs is investigated in detail. It is found that an $\hbox{O}_{2}/\hbox{Ar}$ ratio of 0.75–0.8 produces devices with the best performance. The maximum processing temperature used in this brief is 150 $^{\circ}\hbox{C}$, and the fabricated TFTs have a saturation mobility of 7.4 $\hbox{cm}^{2}/(\hbox{V}\cdot \hbox{s})$, an on–off current ratio of more than $\hbox{1} \times \hbox{10}^{7}$ , and a subthreshold swing of 0.58 V/dec. Experimental results also show that using $\hbox{SiO}_{x}$ as gate dielectric instead of $\hbox{SiN}_{x}$ can improve both carrier mobility and subthreshold.
In-Situ Fluorine-Doped Znsno Thin Film and Thin-Film Transistor

Xuemei Yin,Delang Lin,Wei Zhong,Sunbin Deng,Yuming Xu,Ya-Yi Chen,Lei Lu,Guijun Li,Hoi Sing Kwok,Yi Li,Rongsheng Chen

DOI: https://doi.org/10.2139/ssrn.4380129

2023-01-01

Abstract:In this paper, in-situ fluorine-doped ZnSnO (ZTO:F) thin films prepared by co-sputtering are proposed. It was found that the F had been successfully introduced into the ZTO thin films and distributed uniformly in the bulk. The corresponding top-contact bottom-gated ZTO:F thin film transistors (TFTs) were fabricated with an annealing temperature of 350 degrees C. The fabricated TFTs exhibit a field-effect mobility of 14.2 cm2V-1s-1, on-off ratio of over 109, and subthreshold swing (SS) as low as 87 mV/decade due to the incorporation of F. In addition, the bias stability of fabricated TFTs was also examined and the ????h shifts under negative gate bias stress are not more than & PLUSMN;0.1 V even without any passivation. It is expected that the In-free ZTO:F amorphous oxide semiconductor and the corresponding TFTs have potential for low-cost and environmentally safe fabrication.
P‐1.8: High Performance ZnO Thin Film Transistors on Flexible Substrate with Process Temperature No More Than 100 °C

Junchen Dong,Qi Li,Dedong Han,Yi Wang,Xing Zhang

DOI: https://doi.org/10.1002/sdtp.14512

2021-01-01

SID Symposium Digest of Technical Papers

Abstract:Herein, ZnO thin film transistors (TFTs) are fabricated on a flexible substrate with process temperature no more than 100 □. It is notable that the ZnO TFTs show preferable hysteresis and ouput characteristics with a field effect mobility (μFE) of 18 cm2V−1s−1 and an on‐to‐off curr ent ratio (Ion/Ioff) over 106. Our findings provide a novel route for fabrication of high‐performance flexible oxide TFTs.
High-performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition at Low Temperature

Qi Li,Junchen Dong,Dedong Han,Xing Zhang,Yi Wang

DOI: https://doi.org/10.1109/edtm50988.2021.9420992

2021-01-01

Abstract:High-performance ZnO thin film transistors (TFTs) are fabricated by atomic layer deposition (ALD). The effects of the deposition temperature of ZnO active layer (80, 100, 120, and 140 degrees C) on performance of TFTs are investigated. Devices with ZnO active layer deposited at 120 degrees C exhibit the best performance, such as a field-effect mobility of 31.79 cm(2)V(-1)s(-1), a sub-threshold slope of 181 mV/decade, an on/off state current ratio over 10(9). Besides, the devices show -0.22 and 0.19 V threshold voltage shift under positive and negative gate-bias stress.
Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

Chong Wang,Liang Guo,Mingzhou Lei,Chao Wang,Xuefeng Chu,Fan Yang,Xiaohong Gao,Huan Wamg,Yaodan Chi,Xiaotian Yang

DOI: https://doi.org/10.3390/nano12142397

IF: 5.3

2022-07-13

Nanomaterials

Abstract:A high-performance ZnSnO (ZTO) thin-film transistor (TFT) was fabricated, with ZTO deposited by rf magnetron sputtering. XPS was used to analyze and study the effects of different annealing temperatures on the element composition and valence state of ZTO films. Then, the influence mechanism of annealing treatment on the electrical properties of ZTO thin films was analyzed. The results show that, with an increase in annealing temperature, the amount of metal bonding with oxygen increases first and then decreases, while the oxygen vacancy decreases first and then increases. Further analysis on the ratio of Sn2+ is presented. Electrical results show that the TFT annealed at 600 °C exhibits the best performance. It exhibits high saturation mobilities (μSAT) up to 12.64 cm2V−1s−1, a threshold voltage (VTH) of −6.61 V, a large on/off current ratio (Ion/Ioff) of 1.87 × 109, and an excellent subthreshold swing (SS) of 0.79 V/Decade.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Performance Enhancement of Fully Transparent Tin-Doped Zinc Oxide Thin-Film Transistors Fabricated by Sputtering at Low Temperature

Zhuofa Chen,Dedong Han,Nannan Zhao,Yingying Cong,Jing Wu,Junchen Dong,Feilong Zhao,Lingling Huang,Yi Zhang,Guodong Cui,Lifeng Liu,Shengdong Zhang,Xing Zhang,Yi Wang

DOI: https://doi.org/10.1049/el.2014.3448

2015-01-01

Electronics Letters

Abstract:Fully transparent tin-doped zinc oxide thin-film transistors (TZO TFTs) were successfully fabricated on glass substrate by radio-frequency sputtering at room temperature. In this reported work, TZO is adopted as the channel layer, SiO2 as the gate insulator and indium tin oxide as gate and source/drain electrodes. The surface morphology and crystallographic structure of the TZO films were evaluated by scanning electron microscopy and X-ray diffraction, respectively. Sn atoms are found to successfully replace Zn sites in the lattice and form stable Sn–O bonds. Sn dopants and adding O2 during the TZO channel deposition can enhance the device performance. The as-fabricated TZO TFT exhibited excellent electrical and optical properties. Hence, TZO can be a promising candidate for the next generation driving active-matrix flat panel displays.
ZnSnO thin-film transistors by reactive co-sputtering of Zn and Sn metal targets

Shao Yang,Zhou Xiaoliang,Lin Qingping,Zhang Letao,Lu Huiling,Zhang Shengdong

DOI: https://doi.org/10.1109/EDSSC.2017.8126475

2017-01-01

Abstract:A metallic-target reactive co-sputtering technology is used to fabricate zinc tin oxide (ZTO) thin-film transistors (TFTs). The effect of the O 2 /(Ar+O 2 ) flow rate ratio on the performance of the resulting TFTs is investigated in detail. It is found that an O 2 /(Ar+O 2 ) ratio of 11%-12% produces devices with the best performance, including a linear mobility of 8.6 cm 2 /Vs, subthreshold swing of 0.36 V/decade, and on-to-off current ratio of exceeding 1×10 8 .
Performance enhancement of ATZO TFTs by component control and post treatment

Zhuang Yi,Dedong Han,Junchen Dong,Huijin Li,Dazhong Zhou,Xing Zhang,Yi Wang

DOI: https://doi.org/10.1109/ICSICT49897.2020.9278013

2020-01-01

Abstract:Al-Sn-Zn-O (ATZO) was developed as an In-free oxide semiconductor for thin film transistors (TFTs) channel layer. In this paper we fabricated ATZO TFTs and optimized the electrical performance by adjusting the concentration of Al and Sn in ATZO, post annealing and plasma treatment. It was found that higher Al and Sn concentration leads to lower grain size and higher TFT on/off ratio, and post annealing in air helps to enhance the mobility of ATZO TFTs. N 2 O plasma treatment significantly suppress the off current without a degradation of mobility. By combining aforementioned methods, ATZO TFTs with Ion/I off of 5.77×107, and subthreshold swing (SS) of 0.205 V/dec was achieved, which shows potential for flat panel display applications.
High-performance Si-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

H. Li,D. Han,G. Cui,W. Yu,Y. Cong,S. Zhang,X. Zhang,Y. Wang

DOI: https://doi.org/10.7567/ssdm.2016.ps-9-05

2016-01-01

Abstract:Fully-transparent Silicon-Zinc-Oxide (SiZO) thin film transistors (TFTs) have been successfully fabricated on flexible plastic substrate at low temperature. We studied the influence of oxygen partial pressure during channel deposition on the performance of SiZO TFTs. It is demonstrated that the device prepared under 5% oxygen partial pressure exhibits optimum characteristics with low threshold voltage Vth of 2.1V, small subthreshold swing (SS) of 151mV/decade, high saturation mobility μsat of 102cm 2 V -1 s -1 and high current ratio Ion/Ioff of 4.9×10 8 .
Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy

Wengao Pan,Guoshang Zhang,Xinhua Liu,Kexing Song,Laiyuan Ning,Shuaifang Li,Lijia Chen,Xuefeng Zhang,Tengyan Huang,Huan Yang,Xiaoliang Zhou,Shengdong Zhang,Lei Lu

DOI: https://doi.org/10.3390/mi14122144

IF: 3.4

2023-11-24

Micromachines

Abstract:The zinc-tin-oxide (ZTO) thin-film transistor (TFT) is one of the most promising candidates for advanced display applications, though its popularity is limited by its performances. In this work, a heterojunction channel strategy was adopted to regulate the electron transport behaviors and the TFT performances by manipulating the concentration and the distribution of oxygen vacancies, and a reasonable physical model was proposed based on experimental and simulation results. It is difficult to mediate the contradiction between mobility and threshold voltage for the single channel. Via a heterojunction channel strategy, desirable TFT performances, with mobility of 12.5 cm2/Vs, threshold voltage of 1.2 V and Ion/Ioff of 3 × 109, are achieved when the oxygen-vacancy-enriched layer gets close to the gate insulator (GI). The enhanced performances can be mainly attributed to the formation of two-dimensional electron gas (2DEG), the insensitive potential barrier and the reasonable distribution of oxygen vacancy. On the contrary, when the oxygen-vacancy-enriched layer stays away from GI, all the main performances degenerate due to the vulnerable potential well. The findings may facilitate the development and application of heterojunction channels for improving the performances of electronic devices.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

Shao-Juan Li,Xin He,De-Dong Han,Yi Wang,Lei Sun,Sheng-Dong Zhang

DOI: https://doi.org/10.1109/icsict.2012.6467844

2012-01-01

Abstract:Thin-film transistors using reactive sputtering ZnO with metallic zinc target are fabricated in this work. The maximum processing temperature used is 150°C. The performance of TFTs with high/low-resistivity ZnO dual-active-layer grown at different O2/Ar flow rate ratio (0.75 and 0.8) is investigated. The experiment results show that the surface properties of channel layer play an important role in controlling of the field effect mobility and threshold voltage. The best performance device is obtained with ZnO dual-active-layer, which has the best surface morphology and moderate grain size. The resulting TFT has a field effect mobility of 8.1 cm2/V·s, a threshold voltage of 5.6V, an on/off current ratio of more than 107, and a subthreshold swing of 0.92 V/dec.
High–performance Fully–transparent Ni–doped ZnO Thin–film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

L.L. Huang,D.D. Han,Z.F. Chen,Y.Y. Cong,J. Wu,N.N. Zhao,J.C. Dong,F.L. Zhao,L.F. Liu,S.D. Zhang,X. Zhang,Y. Wang

DOI: https://doi.org/10.7567/ssdm.2014.ps-9-4

2014-01-01

Abstract:2014 International Conference on Solid State Devices and Materials,High–performance Fully–transparent Ni–doped ZnO Thin–film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature
A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid

Min-Chen Chen,Ting-Chang Chang,Sheng-Yao Huang,Kuan-Chang Chang,Hung-Wei Li,Shih-Ching Chen,Jin Lu,Yi Shi

DOI: https://doi.org/10.1063/1.3124658

IF: 4

2009-04-20

Applied Physics Letters

Abstract:A low-temperature method, supercritical CO2 (SCCO2) fluid technology, is employed to improve the device properties of ZnO TFT at 150 °C. In this work, the undoped ZnO films were deposited by sputter at room temperature and treated by SCCO2 fluid which is mixed with 5 ml pure H2O. After SCCO2 treatment, the on/off current ratios and threshold voltage of the device were improved significantly. From x-ray photoelectron spectroscopy analyses, the enhancements were attributed to the stronger Zn–O bonds, the hydrogen-related donors, and the reduction in dangling bonds at the grain boundary by OH passivation.

physics, applied
High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates with a Maximum Process Temperature of 100 °C

Junchen Dong,Qi Li,Zhuang Yi,Dedong Han,Yi Wang,Xing Zhang

DOI: https://doi.org/10.1109/jeds.2020.3034387

2021-01-01

IEEE Journal of the Electron Devices Society

Abstract:In the present work, we testify a strategy to achieve high-performance ZnO thin film transistors (TFTs) on a flexible PET substrate at a maximum process temperature no more than 100 degrees C. Interestingly, the ZnO TFTs exhibit superior electrical properties, including a field-effect mobility of 14.32 cm(2)V(-1)s(-1), a sub-threshold swing of 0.21 V/decade, and an on-to-off current ratio of 3.03 x 10(7). Also, ideal uniformity, hysteresis property, contact resistance, and stability are achieved. Threshold voltage shift (Delta V-TH) under positive and negative bias stress are 0.17 and -0.18 V, respectively. Moreover, the ZnO TFTs manifest good mechanical performance at a bending radius of 10 mm. We expect that our findings propel practical application of the oxide TFTs in flexible electronics.

Low Temperature and High Performance ZnSnO Thin Film Transistors Engineered by In-Situ Thermal Manipulation

High performance of ZnSnO thin-film transistors engineered by oxygen defect modulation

Low-temperature and high-performance ZnSnO thin film transistor activated by lightwave irradiation

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process

Analysis of Low Frequency Noise in in Situ Fluorine-Doped ZnSnO Thin-Film Transistors

Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc Target

In-Situ Fluorine-Doped Znsno Thin Film and Thin-Film Transistor

P‐1.8: High Performance ZnO Thin Film Transistors on Flexible Substrate with Process Temperature No More Than 100 °C

High-performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition at Low Temperature

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

Performance Enhancement of Fully Transparent Tin-Doped Zinc Oxide Thin-Film Transistors Fabricated by Sputtering at Low Temperature

ZnSnO thin-film transistors by reactive co-sputtering of Zn and Sn metal targets

Performance enhancement of ATZO TFTs by component control and post treatment

High-performance Si-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

High–performance Fully–transparent Ni–doped ZnO Thin–film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid

High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates with a Maximum Process Temperature of 100 °C