Abstract:The thin‐film transistors based on metal‐oxide semiconductors are often plagued by the stubborn trade‐off between mobility and stability. A novel combination of the metal‐oxide bilayer with an ultrathin interlayer of metal‐oxide dielectric forms an abrupt metal‐oxide heterojunction channel, synergistically enhancing performance and reliability. The large‐area low‐temperature processing capability and versatile characteristics of amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to promote the developments of next‐generation displays, 3D integrated circuit (3DIC), flexible chips, and electronics. However, the abundant native defects in AOSs engrain an inherent trade‐off between high mobility and trustworthy stability in AOS TFTs, fundamentally limiting the performance metrics and integration scale of oxide‐based electronics. To surmount this obstacle, the bilayer AOS channel is highly expected to combine the merits of diversified AOSs, while the efficiency of such an AOS "heterojunction" is debatable. This work systematically compares the TFTs based on amorphous InGaZnO (a‐IGZO), amorphous InZnO (a‐IZO), and a‐IZO/a‐IGZO bilayer. The active cation interaction between metal‐oxide semiconductors gives rise to a mixed AOS layer rather than a heterojunction channel, corresponding to moderate performance metrics. Such a spontaneous cation interdiffusion is effectively prevented using a dense metal‐oxide dielectric interlayer, aluminum oxide (AlOx). The sharpened interface effectively forms an abrupt metal‐oxide heterojunction, while the electron can still tunnel through the ultrathin AlOx to create a quantum well of 2D electron gas (2DEG). The overall performance and reliability of multilayer AOS TFT are synergistically enhanced using the proposed abrupt metal‐oxide heterojunction architecture.

Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways.

Homojunction Structure Amorphous Oxide Thin Film Transistors with Ultra-High Mobility

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

1‐1: Oxide Semiconductor Thin‐Film Transistors with High Mobility and Stability

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Spray-combustion Synthesis: Efficient Solution Route to High-Performance Oxide Transistors

Viable Approach of Tuning Oxide Semiconductor Thin Films in Solution‐Processed Heterojunction Thin Films Transistors for Both Higher Performances and Stability

Strategy toward High-Mobility Oxide Semiconductor Thin-Film Transistors by Atomic Layer Deposition

Mobility–stability trade-off in oxide thin-film transistors

Comprehensive Review on Amorphous Oxide Semiconductor Thin Film Transistor

c -Axis Aligned 3 nm Thick In 2 O 3 Crystal Using New Liquid DBADMIn Precursor for Highly Scaled FET Beyond the Mobility-Stability Trade-off

Mobility Enhancement In Amorphous In-Ga-Zn-O Thin-Film Transistor By Induced Metallic In Nanoparticles And Cu Electrodes

High-Performance Fully Amorphous Bilayer Metal-Oxide Thin Film Transistors Using Ultra-Thin Solution-Processed Zrox Dielectric

Mobility and Current Boosting of In-Ga-Zn-O thin-film transistors with Metal Capping Layer Oxidation

Hole Mobility Modulation of Solution-Processed Nickel Oxide Thin-Film Transistor Based on High-K Dielectric

Improved Electrical Performance of an Oxide Thin-Film Transistor Having Multistacked Active Layers Using a Solution Process

High-mobility Solution-Processed Tin Oxide Thin-Film Transistors with High-Κ Alumina Dielectric Working in Enhancement Mode.

Supercritical Ammoniation-Enabled Interfacial Polarization for Function-Mode Transformation and Overall Optimization of Thin-Film Transistors

Impact of Layer Configuration and Doping on Electron Transport and Bias Stability in Heterojunction and Superlattice Metal Oxide Transistors

Enhanced Mobility Of Solution-Processed Polycrystalline Zinc Tin Oxide Thin-Film Transistors Via Direct Incorporation Of Water Into Precursor Solution