Abstract:Bilayer‐channel oxide TFTs are fabricated. The top and bottom active layer characteristics are designed by controlling the semiconductor thickness. Top active layer characteristics affect electron transport and stability in bilayer‐channel TFTs. An optimized heterostructure channel leads to effective electron transport and outstanding bias stability. Metal‐oxide thin‐film transistors (TFTs) have garnered much attention because of their advantages such as high transparency, low leakage current, and low processing temperature. However, there is a need to continuously improve their mobility and bias stability for application to next‐generation advanced electronics. In this study, the thickness of bilayer semiconductors is finely controlled to enhance the charge transport characteristics and bias stability in solution‐processed heterojunction oxide TFTs. The thicknesses of the top and bottom layers in the bilayer are individually adjusted by controlling solution molarity. The introduction of a bilayer channel improved the electrical performance of oxide TFTs via effective charge transport. However, trap‐limited conduction becomes dominant in the bilayer with an excessively thick top layer, thereby leading to a significant reduction in mobility and positive bias stability. Meanwhile, although increasing the bottom layer thickness contributes to improved mobility and reliability, it causes a serious negative shift in threshold voltage (VTH). TFTs with an optimized bilayer structure show high mobility at a VTH close to 0 V and have particularly excellent positive bias stress stability. This study on bilayer channel thickness will be beneficial for developing advanced transistors with optimized bilayer or multilayer channels.

Improved Electrical Performance of an Oxide Thin-Film Transistor Having Multistacked Active Layers Using a Solution Process

Enhanced Electrical Properties of Thin-Film Transistor with Self-Passivated Multistacked Active Layers

A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors

Control of subthreshold swing using an in situ PEALD nano-laminated IGZO/Al2O3 multi-channel structured TFT

Viable Approach of Tuning Oxide Semiconductor Thin Films in Solution‐Processed Heterojunction Thin Films Transistors for Both Higher Performances and Stability

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimized Multi-Stacked Active-Layer Structures

Enhancement in electrical properties of dual-active-layer amorphous SiZnSnO/SiInZnO thin film transistors

Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active Layers

Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways.

Performance Improvement of Amorphous Thin-Film Transistors with Solution-Processed InZnO/InMgZnO Bilayer Channels

Solution-processed Stacked TiO2 and Al2O3 Dielectric Layers for High Mobility Thin Film Transistor

Improved Field-Effect Mobility of In–Ga–Zn–O TFTs by Oxidized Metal Layer

High-Performance Low-Voltage Thin-Film Transistors: Experimental and Simulation Validation of Atmospheric Pressure Plasma-Assisted Li5AlO4 Metal Oxide Solution Processing

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

Improving TFT Device Performance by Changing the Thickness of the LZTO/ZTO Dual Active Layer

Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

Influence of metallization process on solution-processed InGaZnO thin film transistors

Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing

Aluminum Oxide/Fluoride Self-Assembled Monolayer Double Gate Dielectric for Solution-Processed Indium Oxide Thin-Film Transistors

Enhanced electrical stability of organic thin-film transistors with polymer semiconductor-insulator blended active layers