Abstract:Amorphous metal-oxide semiconductors (AOSs) such as indium-gallium-zinc-oxide (IGZO) as an active channel have attracted substantial interests with regard to high-performance thin-film transistors (TFTs). Recently, intensive and extensive studies of flexible and/or wearable AOS-based TFTs fabricated by solution-process have been reported for emerging approaches based on device configuration and fabrication process. However, several challenges pertaining to practical and effective solution-process technologies remain to be resolved before low-power consuming AOS-based TFTs for wearable electronics can be realized. In this paper, we investigate the non-thermal annealing processes for sol-gel based metal-oxide semiconductor and dielectric films fabricated by deep ultraviolet (DUV) photo and microwave annealing at low temperature, compared to the conventional thermal annealing at high temperature. A comprehensive investigation including a comparative analysis of the effects of DUV photo and microwave annealing on the degree of metal-oxide-metal networks in amorphous IGZO and high-dielectric-constant (high-k) aluminum oxide (Al2O3) films and device performance of IGZO-TFTs in a comparison with conventional thermal annealing at 400 °C was conducted. We also demonstrate the feasibility of wearable IGZO-TFTs with Al2O3 dielectrics on solution-processed polyimide films exhibiting a high on/off current ratio of 5 × 104 and field effect mobility up to 1.5 cm2/V-s operating at 1 V. In order to reduce the health risk and power consumption during the operation of wearable electronics, the operating voltage of IGZO-TFTs fabricated by non-thermal annealing at low temperature was set below ~1 V. The mechanical stability of wearable IGZO-TFTs fabricated by an all-solution-process except metal electrodes, against cyclic bending tests with diverse radius of curvatures in real-time was investigated. Highly stable and robust flexible IGZO-TFTs without passivation films were achieved even under continuous flexing with a curvature radius of 12 mm.

Influence of metallization process on solution-processed InGaZnO thin film transistors

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

Thin Film Transistor Using Amorphous InGaZnO Films as Both Channel and Source/Drain Electrodes

The Effect of Crystalline Aluminum Oxide on Device Performance of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Operating at Low Voltage

Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors

Tailoring Subthreshold Swing in A‐IGZO Thin‐Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences

Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing

Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature

High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method

Finding the cause of degradation of low-temperature oxide thin-film transistors

Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric

Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors

Low Voltage Driven, Stable Solution-Processed Zinc-Tin-Oxide TFT with HfOy and AlOx Stack Gate Dielectric

Improved Field-Effect Mobility of In–Ga–Zn–O TFTs by Oxidized Metal Layer

Solution Process-Based Thickness Engineering of InZnO Semiconductors for Oxide Thin-Film Transistors with High Performance and Stability

Charge transport properties of high-mobility indium–gallium–zinc oxide thin-film transistors fabricated through atomic-layer deposition

High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

Enhanced Electrical Performance and Stability of Solution-Processed Thin-Film Transistors with In2O3/In2O3:Gd Heterojunction Channel Layer

Effects of film thickness and Sn concentration on electrical properties of solution-processed zinc tin oxide thin film transistors

Enhanced Electrical Properties and Stability in IGZO TFTs via Low-Temperature Activation with MgOx Layer