Abstract:To fabricate oxide thin-film transistors (TFTs) with high performance and excellent stability, preparing high-quality semiconductor films in the channel bulk region and minimizing the defect states in the gate dielectric/channel interfaces and back-channel regions is necessary. However, even if an oxide transistor is composed of the same semiconductor film, gate dielectric/channel interface, and back channel, its electrical performance and operational stability are significantly affected by the thickness of the oxide semiconductor. In this study, solution process-based nanometer-scale thickness engineering of InZnO semiconductors was easily performed via repeated solution coating and annealing. The thickness-controlled InZnO films were then applied as channel regions, which were fabricated with almost identical film quality, gate dielectric/channel interface, and back-channel conditions. However, excellent operational stability and electrical performance suitable for oxide TFT backplane was only achieved using an 8 nm thick InZnO film. In contrast, the ultrathin and thicker films exhibited electrical performances that were either very resistive (high positive VTh and low on-current) or excessively conductive (high negative VTh and high off-current). This investigation confirmed that the quality of semiconductor materials, solution process design, and structural parameters, including the dimensions of the channel layer, must be carefully designed to realize high-performance and high-stability oxide TFTs.

Effects of film thickness and Sn concentration on electrical properties of solution-processed zinc tin oxide thin film transistors

Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors with Low Tin Concentration

High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration

Study of zinc tin oxide thin-film transistor

Effects of Growth Temperature and Annealing on Properties of Zn3sn2o7 Thin Films and Application in Tfts

Solution-processed zinc oxide thin films and top-gate thin film transistors

Influence of metallization process on solution-processed InGaZnO thin film transistors

Solution-Processed Zinc Oxilde Thin Films and Top-Gate Thin Film Transistors

Effects of Sn Doping on the Electrical Performance and Stability of Sub-V Operating Metal-Oxide Thin-Film Transistors Fabricated by Oxygen Annealing

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Controlled 2D growth approach via atomic layer deposition for improved stability and performance in flexible SnO thin-film transistors

Preparation and Properties of Solution-Processed Zinc Tin Oxide Films from a New Organic Precursor

Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors

ZnSnO thin-film transistors by reactive co-sputtering of Zn and Sn metal targets

High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process

Impacts of Sn precursors on solution-processed amorphous zinc–tin oxide films and their transistors

Effect of the Active Channel Thickness Variation in Amorphous In-Zn-Sn-O Thin Film Transistor

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

Solution Process-Based Thickness Engineering of InZnO Semiconductors for Oxide Thin-Film Transistors with High Performance and Stability

Channel thickness effect on the performance of amorphous SiZnSnO semiconductor thin-film transistor with metal capping structure