Abstract:Amorphous metal-oxide semiconductors (AOSs) such as indium-gallium-zinc-oxide (IGZO) as an active channel have attracted substantial interests with regard to high-performance thin-film transistors (TFTs). Recently, intensive and extensive studies of flexible and/or wearable AOS-based TFTs fabricated by solution-process have been reported for emerging approaches based on device configuration and fabrication process. However, several challenges pertaining to practical and effective solution-process technologies remain to be resolved before low-power consuming AOS-based TFTs for wearable electronics can be realized. In this paper, we investigate the non-thermal annealing processes for sol-gel based metal-oxide semiconductor and dielectric films fabricated by deep ultraviolet (DUV) photo and microwave annealing at low temperature, compared to the conventional thermal annealing at high temperature. A comprehensive investigation including a comparative analysis of the effects of DUV photo and microwave annealing on the degree of metal-oxide-metal networks in amorphous IGZO and high-dielectric-constant (high-k) aluminum oxide (Al2O3) films and device performance of IGZO-TFTs in a comparison with conventional thermal annealing at 400 °C was conducted. We also demonstrate the feasibility of wearable IGZO-TFTs with Al2O3 dielectrics on solution-processed polyimide films exhibiting a high on/off current ratio of 5 × 104 and field effect mobility up to 1.5 cm2/V-s operating at 1 V. In order to reduce the health risk and power consumption during the operation of wearable electronics, the operating voltage of IGZO-TFTs fabricated by non-thermal annealing at low temperature was set below ~1 V. The mechanical stability of wearable IGZO-TFTs fabricated by an all-solution-process except metal electrodes, against cyclic bending tests with diverse radius of curvatures in real-time was investigated. Highly stable and robust flexible IGZO-TFTs without passivation films were achieved even under continuous flexing with a curvature radius of 12 mm.

The Effect of Crystalline Aluminum Oxide on Device Performance of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Operating at Low Voltage

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Influence of metallization process on solution-processed InGaZnO thin film transistors

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Aqueous solution-deposited aluminum-gallium-oxide alloy gate dielectrics for low voltage fully oxide thin film transistors

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

High-Performance Fully Thermal ALD-Processed IGZO Thin Film Transistors

Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

Advancements in Metal Oxide Thin Film Quality in Solution-Processed High-κ Dielectrics for High-Performance Transistors

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors