Abstract:Amorphous indiumgalliumzinc-oxide thin film transistors (a-IGZO TFTs) with damage-free back channel wet-etch (BCE) process were achieved by introducing a carbon nanofilm as a barrier layer. We investigate the effects of different source-and-drain (S/D) materials on TFT performance. We find the TFT with Ti/C S/D electrodes exhibits a superior performance with higher output current, lower threshold voltage, and higher effective electron mobility compared to that of Mo/C S/D electrodes. Transmittance electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) are employed to analysis the interfacial interaction between S/D metal/C/a-IGZO layers. The results indicate that the better performance of TFTs with Ti/C electrodes should be attributed to the formations of TiC and TiO at the Ti/C-contact regions, which lead to a lower contact resistance, whereas Mo film is relatively stable and does not react easily with C nanofilm, resulting in a nonohmic contact behavior between Mo/C and a-IGZO layer. However, both kinds of a-IGZO TFTs show good stability under thermal bias stress, indicating that the inserted C nanofilms could avoid the impact on the a-IGZO channel regions during S/D electrodes formation. Finally, we successfully fabricated a high-definition active-matrix organic lighting emitting diode prototype driven by a-IGZO TFTs with Ti/C electrodes in a pilot line.

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

Effect of ITO Serving As a Barrier Layer for Cu Electrodes on Performance of A-Igzo TFT

Effect of Al2O3 Passivation Layer and Cu Electrodes on High Mobility of Amorphous IZO TFT

Influence of Source and Drain Contacts on the Properties of Indium-Gallium Zinc-Oxide Thin-Film Transistors Based on Amorphous Carbon Nanofilm As Barrier Layer

Improved Performance of the Amorphous Indium-Gallium-zinc Oxide Thin Film Transistor with Cu-Mo Source/drain Electrode

Amorphous Indium-zinc-oxide Thin-film Transistors with Copper Source/Drain Electrodes

Influence of Source and Drain Contacts on the Properties of the Indium-Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics

Mobility Enhancement In Amorphous In-Ga-Zn-O Thin-Film Transistor By Induced Metallic In Nanoparticles And Cu Electrodes

Evolution of Enhanced Performance of a-IGZO TFTs With Cu/Al-Based Contacts

Effect of Source/ Drain Electrode Fabrication Technology on the Electrical Properties of Solution-processed A-IGZO Based Transistors

Mo/Cu Source/Drain Electrodes for Amorphous InGaZnO Thin Film Transistors

Effect of Source/drain Preparation on the Performance of Oxide Thin-Film Transistors

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors

Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors

Amorphous InGaZnO Thin Film Transistors with Wet-Etched Ag Electrodes

Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium- Zinc-Oxide TFTs with Al Reacted Source/Drain

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

The Effect of Crystalline Aluminum Oxide on Device Performance of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Operating at Low Voltage

Impact of electrode materials on the performance of amorphous IGZO thin-film transistors