Abstract:Developing a low-temperature fabrication strategy of an amorphous InGaZnO (α-IGZO) channel layer is a prerequisite for high-performance oxide-based thin film transistor (TFT) flexible device applications. Herein, an ultraviolet-assisted oxygen ambient rapid thermal annealing method (UV-ORTA), which combines ultraviolet irradiation with rapid annealing treatment in an oxygen atmosphere, was proposed to realize the achievement of high-performance α-IGZO TFTs at low temperature. Experimental results have confirmed that UV-ORTA treatment has the ability to suppress defects and obtain high-quality films similar to high-temperature-annealing-treated samples. α-IGZO/HfAlO TFTs with high-performance and low-voltage operating have been achieved at a low temperature of 180 °C for 200 s, including a high μsat of 23.12 cm2 V–1 S–1, large Ion/off of 1.1 × 108, small subthreshold swing of 0.08 V/decade, and reliable stability under bias stress, respectively. As a demonstration of complex logic applications, a low-voltage resistor-loaded unipolar inverter based on an α-IGZO/HfAlO TFT has been built, demonstrating full swing characteristics and a high gain of 13.8. Low-frequency noise (LFN) characteristics of α-IGZO/HfAlO TFTs have been presented and concluded that the noise source tended to a carrier number fluctuation (ΔN) model from a carrier number and correlated mobility fluctuation (ΔN–Δμ) model. As a result, it can be inferred that the low-temperature UV-ORTA technique to improve α-IGZO thin film quality provides a facile and designable process for the integration of α-IGZO TFTs into a flexible electronic system.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsnano.2c01286.The device performance with different annealing methods; X-ray reflection experimental and fitted curves of the α-IGZO film before and after UV treatment; transmission spectrum of HfAlO film in the UV–vis region and the (αhν)2 variation with hν; capacitance density vs frequency curve of the HfAlO film; leakage current curves of HfAlO films; α-IGZO/HfAlO TFT output and transfer curves after UV-ORTA treatment with various oxygen pressures; logarithm of absorption coefficients of the α-IGZO thin film as a function of photon energy; electrical properties of devices subjected to UV-ORTA and ORTA processing; thickness and density of α-IGZO films before and after UV treatment; electrical performance parameters of α-IGZO/HfAlO TFTs subjected to UV-ORTA treatment with various oxygen pressures; summary of key electrical characteristics of α-IGZO TFTs prepared by different low-temperature processes; performance parameters of devices with and without UV treatment; reported voltage gain comparison of inverters (PDF)This article has not yet been cited by other publications.

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