Abstract:Abstract In this study, an Ar/O 2 plasma mixture treatment with different proportions of O 2 was used to reduce the oxygen vacancy density in an amorphous indium gallium zinc oxide (a-IGZO) thin film. The objective was to enhance the field-effect carrier mobility in a thin-film transistor (TFT) with the IGZO film as the channel layer. Atomic force microscopy revealed that the roughness of the IGZO film after plasma treatment was higher than that of the untreated film; however, the surface roughness of the IGZO film decreased after the proportion of O 2 was increased in the plasma. The Hall measurement results showed that the resistivity of the plasma-treated IGZO film increased with a decrease in the electron concentration in the film; in addition, the carrier mobility considerably increased. The IGZO TFT fabricated from this film exhibited a high field-effect carrier mobility of 36 cm 2 V −1 s −1 , a subthreshold swing (SS) of 1.25 V/decade, an I OFF current of 4.58 × 10 −11 A, and an I ON / I OFF current ratio of 7.55 × 10 5 . To further improve the device performance, the plasma-treated IGZO films were subjected to thermal annealing with the annealing temperature ranging from 100 °C to 300 °C. After the annealing process, the plasma-treated IGZO TFTs demonstrated a further improvement in the device performance with a field-effect carrier mobility of 38.8 cm 2 V −1 s −1 , SS of 0.7 V/decade, I OFF current of 1.04 × 10 −11 A, and an I ON / I OFF current ratio of 9.93 × 10 6 . In addition, a reliability test was performed to evaluate the stability of the IGZO TFT devices, which revealed that the threshold voltage maintained a high degree of stability during the long-term tests. Therefore, the plasma-treated IGZO TFTs with subsequent postgrowth annealing could be helpful for the fabrication of next-generation flat-panel displays.

Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF 4 +O 2 Plasma Treatment

Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF<sub>4</sub> Plasma Treatment

Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF 4 Plasma Treatment

Performance Improvement of Back-Channel-Etched A-Igzo TFTs by O2 Plasma Treatment

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors

Effect of Oxygen Plasma Treatment on the Performance of GQDs-Modulated InGaZnO Thin-Film Transistors

Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar–O2 Mixed Plasma Treatment and Rapid Thermal Annealing

Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

Rapid Improvement in Thin Film Transistors with Atomic-Layer-Deposited InOxChannels Via O2Plasma Treatment

Plasma Influences on the Performance of Ti Protected Back-Channel-Etched A-Igzo TFTs

Sol-gel Indium-Zinc-tin-oxide Thin Film Transistor Pixel Array with Superior Stabilityunder Negative Bias Illumination Stress

Enhanced Operation of Back-Channel-Etched a-IGZO TFTs by Fluorine Treatment during Source/Drain Wet-Etching

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Fast Improved Thin-Film Transistors with Atomic-Layer-Deposited In2O3 Channels Via O2 Plasma Treatment

Enhancement of Electrical Stability in Solution Processed In$_{\text{2}}$O$_{\text{3}}$ TFT by an Oxygen Plasma-Assisted Treatment

Electrical and Hysteresis Characteristics of Top-Gate InGaZnO Thin-Film Transistors with Oxygen Plasma Treatment Prior to TEOS Oxide Gate Dielectrics

Optimizing Oxygen Plasma Treatment Time to Improve the Characteristics of a-IGZO Thin-Film Transistors and Resistive-Load Inverters

Amorphous InZnSnO thin-film-transistors performance enhancement with low-energy Xenon Pulsed-light annealing

Performance and Stability of Amorphous Ingazno Thin Film Transistors with A Designed Device Structure

Thermal Annealing Improved Stability of Amorphous InGaZnO Thin-Film Transistors Under AC Bias Stresses