Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF 4 Plasma Treatment

Chen Wang,Cong Peng,Pan Wen,Meng Xu,Longlong Chen,Xifeng Li,Jianhua Zhang

DOI: https://doi.org/10.1109/ted.2023.3244903

IF: 3.1

2023-03-29

IEEE Transactions on Electron Devices

Abstract:The performance of back channel etching (BCE) amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) was improved using a carbon tetrafluoride (CF plasma treatment of the back channel (BC) after the wet-etching process of source–drain (SD) electrodes. X-ray photoelectron spectroscopy (XPS) analysis showed that the wet-etching of -based etchant may result in Mo-related residue, which deteriorate a-IGZO BC. In comparison with as-etching indium gallium zinc oxide (IGZO) TFT, the saturation field effect mobility increases from 7.8 to 16.4 cm2/Vs, subthreshold swing (SS) decreases from 0.82 to 0.34 V/decade, the ratio of on current and off current improves from to , and the threshold voltage shift of negative bias illumination stability (NBIS) improves from −3.4 to −0.6 V. The fact confirmed that CF4 plasma treatment of the BC can effectively reduce BC defects and improve the electrical characteristics of BCE IGZO TFT comprehensively.

engineering, electrical & electronic,physics, applied