Abstract:Fully transparent indium gallium zinc oxide thin film transistors (IGZO TFTs) on glass substrate were fabricated by radio frequency magnetron sputtering at room temperature. The influence of oxygen plasma treatment technology on the characteristics of IGZO TFTs were analyzed. Before growing the source/drain electrodes, different power of oxygen plasma were used to treat the surface of the source/drain region. The experiment results suggest that the plasma treatment can improve the performance of device. Compared with the control group, the TFTs with O2 plasma treatment for 10 seconds and power of 150W show a better performance. The Ion/Ioff ratio was increased by an order of magnitude from 2.67×10 4 to 2.1×105, and the saturation mobility (μsat) was doubled from 0.54 cm 2 V -1 s -1 to 1.1cm 2 V -1 s -1 . The sub-threshold swing (SS) is 0.42V/dec, and Ion/Ioff ratio is 2.1×10 5 .

Impact of Wet Etchant with Different PH Value on the Performance of Back-Channel-etch A-Igzo Thin-Film-transistor

Effects of Over-Etching Time on the Characteristics of Amorphous IGZO Thin-Film Transistors with Back-Channel-etch Structure

Enhanced Operation of Back-Channel-Etched a-IGZO TFTs by Fluorine Treatment during Source/Drain Wet-Etching

Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF<sub>4</sub> Plasma Treatment

Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF 4 Plasma Treatment

P-15: AZO Etch Buffer Layer Based Back-Channel-Etch A-Igzo TFT Technology

Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF 4 +O 2 Plasma Treatment

Effect of Annealing on Wet Etch of Amorphous IGZO Thin Film

Back-Channel-Etched IGZO TFTs With Cu-Based Multilayer Electrodes Using MoAl Alloy and MoMn Alloy as Buffer Layers

Performance Improvement of Back-Channel-Etched A-Igzo TFTs by O2 Plasma Treatment

A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology with Al-Doped ZnO As Source/Drain and Pixel Electrodes

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

Oxygen Partial Pressure and Annealing Temperature Influence on the Performance of Back-Channel-etch Zinc Tin Oxide Thin Film Transistors

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors

Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

Enlightenment of Deionized‐Water Bathing IGZO TFTs

Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

Effect of annealing atmosphere on IGZO thin film transistors on a deformable softening polymer substrate