Abstract:The thin‐film transistors based on metal‐oxide semiconductors are often plagued by the stubborn trade‐off between mobility and stability. A novel combination of the metal‐oxide bilayer with an ultrathin interlayer of metal‐oxide dielectric forms an abrupt metal‐oxide heterojunction channel, synergistically enhancing performance and reliability. The large‐area low‐temperature processing capability and versatile characteristics of amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to promote the developments of next‐generation displays, 3D integrated circuit (3DIC), flexible chips, and electronics. However, the abundant native defects in AOSs engrain an inherent trade‐off between high mobility and trustworthy stability in AOS TFTs, fundamentally limiting the performance metrics and integration scale of oxide‐based electronics. To surmount this obstacle, the bilayer AOS channel is highly expected to combine the merits of diversified AOSs, while the efficiency of such an AOS "heterojunction" is debatable. This work systematically compares the TFTs based on amorphous InGaZnO (a‐IGZO), amorphous InZnO (a‐IZO), and a‐IZO/a‐IGZO bilayer. The active cation interaction between metal‐oxide semiconductors gives rise to a mixed AOS layer rather than a heterojunction channel, corresponding to moderate performance metrics. Such a spontaneous cation interdiffusion is effectively prevented using a dense metal‐oxide dielectric interlayer, aluminum oxide (AlOx). The sharpened interface effectively forms an abrupt metal‐oxide heterojunction, while the electron can still tunnel through the ultrathin AlOx to create a quantum well of 2D electron gas (2DEG). The overall performance and reliability of multilayer AOS TFT are synergistically enhanced using the proposed abrupt metal‐oxide heterojunction architecture.

Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors

24.3: Short‐Channel Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor Enabled by Thermal Dehydrogenation and Oxidizing Defect‐Suppression

Improvements in passivation effect of amorphous InGaZnO thin film transistors

Enhancing Reliability of Short-channel Dual gate InGaZnO Thin Film Transistors by Bottom-gate Oxide Engineering

Fluorination-mitigated High-Current Degradation of Amorphous InGaZnO Thin-Film Transistors

Channel-Shortening Effect Suppression of a High-Mobility Self-Aligned Oxide TFT Using Trench Structure

Influence of Source and Drain Contacts on the Properties of Indium-Gallium Zinc-Oxide Thin-Film Transistors Based on Amorphous Carbon Nanofilm As Barrier Layer

Structure Optimization on Elevated-Metal A-Ingazno Thin Film Transistors

Effects of Etching Residue on Positive Shift of Threshold Voltage in Amorphous Indium–Zinc-Oxide Thin-Film Transistors Based on Back-Channel-Etch Structure

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Multiple effects of hydrogen on InGaZnO thin-film transistor and the hydrogenation-resistibility enhancement

Effect of Two-Step Annealing on High Stability of a-IGZO Thin-Film Transistor

Effect of Source/drain Preparation on the Performance of Oxide Thin-Film Transistors

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Analysis of Channel-Length Dependence of Residual Hydrogen Diffusion From the Gate Insulator During Oxygen Annealing Treatment in IGZO TFTs

Homo-Junction Bottom-Gate Amorphous In–Ga–Zn–O TFTs with Metal-Induced Source/Drain Regions

24‐2: Distinguished Student Paper: Fluorination for Enhancing the Resistance of Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor Against Hydrogen‐Induced Degradation

Indium–Gallium–Zinc–Oxide Thin-Film Transistors Based on Homojunctioned Structure Fabricated with a Self-Aligned Process