Abstract:The influences of hydrogen impurities on the performances of indium-gallium-zinc oxide (IGZO) thin film transistors (TFT) are summarized in this article. Firstly, the sources of hydrogen impurities in the IGZO channels of the TFTs are proposed, which could originate from the residual gas in the deposition chamber, the molecules absorbed on the sputtering target surface, the neighbor films that contain abundant hydrogen elements, doping during annealing processes, etc. The hydrogen impurities in the IGZO films can exist in the forms of hydroxyl groups and metal hydride bonds, respectively. The former originates from the reaction between H atoms and the O2- ions. This reaction releases free electrons, leading to a rise of the Fermi level of IGZO, and thus enhancing the mobilities of IGZO TFTs. The latter incurs negative charges on H atoms, and thus changing the distribution of the subgap density of states, hence improving the negative bias (or illumination) stabilities of IGZO TFTs. Subsequently, various methods are also proposed to characterize hydrogen elements in IGZO, such as secondary ion mass spectroscopy, thermal desorption spectroscopy, X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Finally, the effects of hydrogen impurities on the electrical characteristics of the IGZO TFTs, such as the field effect mobilities, subthreshold swings, threshold voltages, on/off current ratios as well as the positive and negative bias stress stabilities, are discussed. The results indicate that hydrogen element concentration and process temperature are two key factors for the device performances. With the increase of hydrogen element concentration in the IGZO channels, the TFTs exhibit higher electron mobilities, lower subthreshold swings and better reliabilities. However, annealing at too high or low temperatures cannot improve the device performance, and the most effective annealing temperature is 200-300 degrees C. It is anticipated that this review could be helpful to the IGZO TFT researchers in improving the device performances and understanding the underlying mechanism.

24‐2: Distinguished Student Paper: Fluorination for Enhancing the Resistance of Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor Against Hydrogen‐Induced Degradation

Resilience of Fluorinated Indium-Gallium-Zinc Oxide Thin-Film Transistor Against Hydrogen-Induced Degradation

Fluorinated Indium‐gallium‐zinc Oxide Thin‐film Transistor with Reduced Vulnerability to Hydrogen‐induced Degradation

Multiple effects of hydrogen on InGaZnO thin-film transistor and the hydrogenation-resistibility enhancement

Fluorination-mitigated High-Current Degradation of Amorphous InGaZnO Thin-Film Transistors

24.3: Short‐Channel Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor Enabled by Thermal Dehydrogenation and Oxidizing Defect‐Suppression

P‐18: Student Poster: Non‐Oxidizing Pre‐Annealing for Enhanced Fluorination of an Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor

Effects Of Hydrogen Impurities On Performances And Electrical Reliabilities Of Indium-Gallium-Zinc Oxide Thin Film Transistors

Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors

Performance Enhancement of InGaZnO Top-Gate Thin Film Transistor With Low-Temperature High-Pressure Fluorine Treatment

Comparative Study on Hydrogen Behavior in InGaZnO Thin Film Transistors with a SiO2/SiNx/SiO2 Buffer on Polyimide and Glass Substrates

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3 Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors

A Comparative Study on Fluorination and Oxidation of Indium–Gallium–Zinc Oxide Thin-Film Transistors

In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI

Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation

40‐4: Invited Paper: Self‐Aligned Top‐Gate Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors with Hafnium‐Induced Source/Drain Regions

Marked improvement in reliability of 150 °C processed IGZO thin-film transistors by applying hydrogenated IGZO as a channel material

P‐15: the Use of Fluorination to Enhance the Performance and the Reliability of Elevated‐Metal Metal‐Oxide Thin‐Film Transistors

Fluorination-Enabled Monolithic Integration of Enhancement-and Depletion-Mode Indium-Gallium-Zinc Oxide TFTs

Fluorinated Metal-Oxide Thin-Film Transistors for Circuit Implementation on a Flexible Substrate