Abstract:The influences of hydrogen impurities on the performances of indium-gallium-zinc oxide (IGZO) thin film transistors (TFT) are summarized in this article. Firstly, the sources of hydrogen impurities in the IGZO channels of the TFTs are proposed, which could originate from the residual gas in the deposition chamber, the molecules absorbed on the sputtering target surface, the neighbor films that contain abundant hydrogen elements, doping during annealing processes, etc. The hydrogen impurities in the IGZO films can exist in the forms of hydroxyl groups and metal hydride bonds, respectively. The former originates from the reaction between H atoms and the O2- ions. This reaction releases free electrons, leading to a rise of the Fermi level of IGZO, and thus enhancing the mobilities of IGZO TFTs. The latter incurs negative charges on H atoms, and thus changing the distribution of the subgap density of states, hence improving the negative bias (or illumination) stabilities of IGZO TFTs. Subsequently, various methods are also proposed to characterize hydrogen elements in IGZO, such as secondary ion mass spectroscopy, thermal desorption spectroscopy, X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Finally, the effects of hydrogen impurities on the electrical characteristics of the IGZO TFTs, such as the field effect mobilities, subthreshold swings, threshold voltages, on/off current ratios as well as the positive and negative bias stress stabilities, are discussed. The results indicate that hydrogen element concentration and process temperature are two key factors for the device performances. With the increase of hydrogen element concentration in the IGZO channels, the TFTs exhibit higher electron mobilities, lower subthreshold swings and better reliabilities. However, annealing at too high or low temperatures cannot improve the device performance, and the most effective annealing temperature is 200-300 degrees C. It is anticipated that this review could be helpful to the IGZO TFT researchers in improving the device performances and understanding the underlying mechanism.

Marked improvement in reliability of 150 °C processed IGZO thin-film transistors by applying hydrogenated IGZO as a channel material

In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Improvement of Amorphous InGaZnO Thin-Film Transistor Reliability and Electrical Performance Using ALD SiO2 Interfacial Layer on PECVD SiO2 Gate Insulator

Effects Of Hydrogen Impurities On Performances And Electrical Reliabilities Of Indium-Gallium-Zinc Oxide Thin Film Transistors

Improved mobility and bias stability of Hf-doped IGZO/IZO/Hf-doped IGZO thin-film transistor

Effect of Two-Step Annealing on High Stability of a-IGZO Thin-Film Transistor

Improvement of Device Characteristics of Low Temperature IGZO Thin-film Transistors through Laser Post Annealing

Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing

Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications

Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO2 Buffer Layer

Enhancing Reliability of Short-channel Dual gate InGaZnO Thin Film Transistors by Bottom-gate Oxide Engineering

High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method

Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar–O2 Mixed Plasma Treatment and Rapid Thermal Annealing

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Effect of annealing atmosphere on IGZO thin film transistors on a deformable softening polymer substrate

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

Enhancing the Stability and Mobility of TFTs via Indium-Tungsten Oxide and Zinc Oxide Engineered Heterojunction Channels Annealed in Oxygen Ambient

P‐3: High Temperature Annealing Behavior of IGZO Using Plasma Enhanced Atomic Layer Deposition

Improvements in passivation effect of amorphous InGaZnO thin film transistors

The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors