Abstract:Top-gate self-aligned structured oxide thin-film transistors (TFTs) are suitable for the backplanes of high-end displays because of their low parasitic capacitances. The gate insulator (GI) deposition process should be carefully designed to manufacture a highly stable, high-mobility oxide TFT, particularly for a top-gate structure. In this study, a nanometer-thick Al2O3 layer via plasma-enhanced atomic layer deposition (PE-ALD) is deposited on the top-gate bottom-contact structured oxide TFT as the interface tailoring layer, which can also act as the hydrogen barrier to modulate carrier generation from hydrogen incorporation into the active layer of the TFT during the following process such as postannealing. Al-doped InSnZnO (Al/ITZO) with an Al/In/Sn/Zn atomic ratio composition of 1.7:24.3:40:34 was used for high mobility oxide semiconductors, and an Al2O3/Si3N4 bilayer was used for the GI. The degradation issue due to the excellent barrier characteristics of Al2O3 and Si3N4 can be minimized. An oxide TFT fabricated without the interface tailoring layer exhibits conductor-like characteristics owing to the excessive carrier generation by hydrogen incorporation. However, TFTs with additional interface layers exhibit reasonable characteristics and distinct trends in electrical characteristics depending on the thicknesses of the interface layers. The optimized devices exhibit an average turn-on voltage (Von) of -0.31 V with 33.63 cm2/(V s) of high mobility and 0.09 V/dec of subthreshold swing value. The interfaces between the active layer and hydrogen barriers were investigated using a high-resolution transmission electron microscope, contact angle measurement, and secondary ion mass spectroscopy to reveal the origin of the trends in properties between the devices. The top-gate device with a hydrogen barrier using the four-cycle deposition exhibits optimum electrical characteristics of both high mobility and good stability with only a 0.04 V shift of Von under positive-bias temperature stress (PBTS). We realize a high-end, self-aligned TFT with high mobility [34.7 cm2/(V s)] and negligible Von shift of -0.06 V under PBTS by applying a subnanometer hydrogen barrier.

Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3 Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Engineering a Subnanometer Interface Tailoring Layer for Precise Hydrogen Incorporation and Defect Passivation for High-End Oxide Thin-Film Transistors

Multiple effects of hydrogen on InGaZnO thin-film transistor and the hydrogenation-resistibility enhancement

Comparative Study on Hydrogen Behavior in InGaZnO Thin Film Transistors with a SiO2/SiNx/SiO2 Buffer on Polyimide and Glass Substrates

Gate Insulator Engineering in Top-Gated Indium-Tin-Oxide-Stabilized ZnO Thin-Film Transistors

Hydrogen anion and subgap states in amorphous In–Ga–Zn–O thin films for TFT applications

Ultra-thin gate insulator of atomic-layer-deposited AlO x and HfO x for amorphous InGaZnO thin-film transistors

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Sputtered AlOx Interlayer for Improving Performance of A-Ingazno TFTs: A Study on Hydrogen Diffusion Mitigation and Electron Modulation

Ultra-thin top-gate insulator of atomic-layer-deposited HfO x for amorphous InGaZnO thin-film transistors

Ultra-thin Top-Gate Insulator of Atomic-Layer-deposited HfOx for Amorphous InGaZnO Thin-Film Transistors

Improvement of Amorphous InGaZnO Thin-Film Transistor Reliability and Electrical Performance Using ALD SiO2 Interfacial Layer on PECVD SiO2 Gate Insulator

Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors

Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Highly Robust Atomic Layer Deposition‐Indium Gallium Zinc Oxide Thin‐Film Transistors with Hybrid Gate Insulator Fabricated via Two‐Step Atomic Layer Process for High‐Density Integrated All‐Oxide Vertical Complementary Metal‐Oxide‐Semiconductor Applications

High-quality indium–gallium–zinc oxide films synthesized by atomic layer deposition using a single cocktail precursor based on a liquid-delivery system and their application in transistors and inverters

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method