Abstract:We demonstrated the physical and electrical properties of the In-Ga-Zn-O (IGZO) thin films prepared by atomic-layer deposition (ALD) method and investigated the effects of the ALD temperature. The film composition (atomic ratio of In:Ga:Zn) and film density were examined to be 1:1:3 and 5.9 g/cm3, respectively, for all the temperature conditions. The optical band gaps decreased from 3.81 to 3.21 eV when the ALD temperature increased from 130 to 170 °C. The amounts of oxygen-related defects such as oxygen vacancies increased with increasing the ALD temperature. It was found from the in situ temperature-dependent electrical conductivity measurements that the electronic natures including the defect structures and conduction mechanism of the IGZO thin films prepared at different temperatures showed marked variations. The carrier mobilities in the saturation regions (μsat's) for the fabricated thin film transistors (TFTs) using the IGZO channel layers were estimated to be 6.1 to 14.8 cm2 V-1 s-1 with increasing the ALD temperature from 130 to 170 °C. Among the devices, when the ALD temperature was controlled to be 150 °C, the IGZO TFTs showed the best performance, which resulted from the fact that the amounts of oxygen vacancies and interstitial defects could be appropriately modulated at this condition. Consequently, the μsat, subthreshold swing, and on/off ratio for the TFT using the IGZO channel prepared at 150 °C showed 10.4 cm2 V-1 s-1, 90 mV/dec, and 2 × 109, respectively. The threshold voltage shifts of this device could also be effectively reduced to be 0.6 and -3.2 V under the positive-bias and negative-bias-illumination stress conditions. These obtained characteristics can be comparable to those for the sputter-deposited IGZO TFTs.

Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic-Layer Deposition

Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO 2 Gate Dielectric

Effects of Hydrogen Doping on a-GIZO Thin-Film Transistors With Hafnium Dioxide Gate Insulators Formed by Atomic Layer Deposition at Different Temperatures

Ultra-thin gate insulator of atomic-layer-deposited AlO x and HfO x for amorphous InGaZnO thin-film transistors

Effect of HfO2-Based Multi-Dielectrics on Electrical Properties of Amorphous In-Ga-Zn-O Thin Film Transistors

Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric

Ultra-thin top-gate insulator of atomic-layer-deposited HfO x for amorphous InGaZnO thin-film transistors

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

Improvement of Amorphous InGaZnO Thin-Film Transistor Reliability and Electrical Performance Using ALD SiO2 Interfacial Layer on PECVD SiO2 Gate Insulator

Effect Of Active Layer Deposition Temperature On The Performance Of Sputtered Amorphous In-Ga-Zn-O Thin Film Transistors

Thermal stability of amorphous InGaZnO thin film transistors passivated by AlO x layers

Effect of oxygen partial pressure on the density of states of amorphous InGaZnO thin-film transistors

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Ultra-thin Top-Gate Insulator of Atomic-Layer-deposited HfOx for Amorphous InGaZnO Thin-Film Transistors

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Thermal Stability of Amorphous InGaZnO Thin Film Transistors with Different Oxygen-Contained Active Layers

High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film