Abstract:The influences of hydrogen impurities on the performances of indium-gallium-zinc oxide (IGZO) thin film transistors (TFT) are summarized in this article. Firstly, the sources of hydrogen impurities in the IGZO channels of the TFTs are proposed, which could originate from the residual gas in the deposition chamber, the molecules absorbed on the sputtering target surface, the neighbor films that contain abundant hydrogen elements, doping during annealing processes, etc. The hydrogen impurities in the IGZO films can exist in the forms of hydroxyl groups and metal hydride bonds, respectively. The former originates from the reaction between H atoms and the O2- ions. This reaction releases free electrons, leading to a rise of the Fermi level of IGZO, and thus enhancing the mobilities of IGZO TFTs. The latter incurs negative charges on H atoms, and thus changing the distribution of the subgap density of states, hence improving the negative bias (or illumination) stabilities of IGZO TFTs. Subsequently, various methods are also proposed to characterize hydrogen elements in IGZO, such as secondary ion mass spectroscopy, thermal desorption spectroscopy, X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Finally, the effects of hydrogen impurities on the electrical characteristics of the IGZO TFTs, such as the field effect mobilities, subthreshold swings, threshold voltages, on/off current ratios as well as the positive and negative bias stress stabilities, are discussed. The results indicate that hydrogen element concentration and process temperature are two key factors for the device performances. With the increase of hydrogen element concentration in the IGZO channels, the TFTs exhibit higher electron mobilities, lower subthreshold swings and better reliabilities. However, annealing at too high or low temperatures cannot improve the device performance, and the most effective annealing temperature is 200-300 degrees C. It is anticipated that this review could be helpful to the IGZO TFT researchers in improving the device performances and understanding the underlying mechanism.

Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation

Comparative Study on Hydrogen Behavior in InGaZnO Thin Film Transistors with a SiO2/SiNx/SiO2 Buffer on Polyimide and Glass Substrates

Multiple effects of hydrogen on InGaZnO thin-film transistor and the hydrogenation-resistibility enhancement

Hydrogen-Related Instability of IGZO Field-Effect Transistors

9.2: Mechanism of H<sub>2</sub>O‐induced Instability of Self‐Aligned Top‐Gate Amorphous InGaZnO TFTs

Effects Of Hydrogen Impurities On Performances And Electrical Reliabilities Of Indium-Gallium-Zinc Oxide Thin Film Transistors

Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor

Abnormal Bias Instabilities Induced by Lateral H2O Diffusion into Top-Gate Insulator of A-Ingazno Thin-Film Transistors

Enhancing Reliability of Short-channel Dual gate InGaZnO Thin Film Transistors by Bottom-gate Oxide Engineering

High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx

Dependence of a Hydrogen Buffer Layer on the Properties of Top-Gate IGZO TFT

Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors

Thermal Dehydrogenation Impact on Positive Bias Stability of Amorphous InSnZnO Thin-Film Transistors

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Abnormal Hump and Two-Step Degradation of Top Gate a-InGaZnO TFTs Under Positive Bias Stress

Hydrogen anion and subgap states in amorphous In–Ga–Zn–O thin films for TFT applications

Performance Enhancement of InGaZnO Top-Gate Thin Film Transistor With Low-Temperature High-Pressure Fluorine Treatment

Effects of Hydrogen Doping on a-GIZO Thin-Film Transistors With Hafnium Dioxide Gate Insulators Formed by Atomic Layer Deposition at Different Temperatures

Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics

Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing

Improvement in Reliability of Amorphous Indium–gallium–zinc Oxide Thin-Film Transistors with Teflon/SiO2 Bilayer Passivation under Gate Bias Stress