Abstract:The tremendous advances flexible electronics has experienced have led to the demonstration and - in some cases - commercialization of a plethora of devices, such as foldable displays, ubiquitously integrated sensor systems, and imperceptible implants. All these systems call for specialized analog circuits capable to transmit and receive data, condition sensors, drive actuators or control powering devices. Nevertheless, the current availability of materials and processes compatible with flexible foils imposes limitations to the realization of high-performance flexible analog systems. Among state-of-the-art technologies, amorphous metal oxides – and especially Indium-Gallium Zinc-Oxide (IGZO) – thin-film-transistors (TFTs), are extremely suited due to their electrical and mechanical performance. Here, we present TFTs based on IGZO semiconductor and Al2O3 insulating layers on polyimide substrates. First, we summarize different approaches to reduce the transistor channel length (down to 160 nm), together with their influence on the AC performance. Even though sub-500 nm lengths are demonstrated for TFTs fabricated using vertical structures, direct laser writing and focused ion beam milling, the highest transit and oscillation frequencies of respectively 135 MHz and 398 MHz, are achieved by 500 nm long self-aligned TFTs. We then show how flexible IGZO TFTs enable the realization of complex, flexible analog circuits operating at frequencies up to 20 MHz. However, even if remarkable performances are demonstrated for flexible NMOS circuits, their unipolar characteristics results in limited gain, high power consumption and complex design. To overcome this, we also show how the complementation of IGZO with ptype carbon nanotubes results in flexible common-source CMOS amplifiers with gain of 28.7 dB.

Fluorinated Metal-Oxide Thin-Film Transistors for Circuit Implementation on a Flexible Substrate

P‐19: Student Poster: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistors for Gate‐Driver Circuit Fabricated on a Flexible Substrate

A Comparative Study on Fluorination and Oxidation of Indium–Gallium–Zinc Oxide Thin-Film Transistors

P‐15: the Use of Fluorination to Enhance the Performance and the Reliability of Elevated‐Metal Metal‐Oxide Thin‐Film Transistors

Fluorination-Enabled Monolithic Integration of Enhancement-and Depletion-Mode Indium-Gallium-Zinc Oxide TFTs

P‐1.4: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Fluorinated Indium‐Gallium‐Zinc Oxide Channel Towards Flexible Applications

Fabrication and performance of indium oxide based transparent thin film transistors

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

A cost-effective fluorination method for enhancing the performance of metal oxide thin-film transistors

Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination

High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates

Bendable metal oxide thin-film transistors and circuits for analog electronics applications

Modification of Indium Tin Oxide Electrodes by Fluorinated Silanes for Transparent Organic Thin-Film Transistors

Indium-zinc-tin-oxide thin-film-transistor reliability enhancement using fluoridation with CF 4 reactive sputtering

Amorphous IZO-based transparent thin film transistors

Fluorination-mitigated High-Current Degradation of Amorphous InGaZnO Thin-Film Transistors

P‐18: Student Poster: Non‐Oxidizing Pre‐Annealing for Enhanced Fluorination of an Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor

Letter: Solution-Processed Flexible Zinc-Tin Oxide Thin-Film Transistors on Ultra-Thin Polyimide Substrates

Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates

High Performance (vth ~ 0 V, SS ~ 69 Mv/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation

Enhancing the Electrical and Thermal Stability of Organic Thin-Film Transistors by Utilizing Fluorinated Polyimide and Silicon Dioxide Bilayer Gate Dielectric