Abstract:Amorphous InGaZnO (a-InGaZnO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in next-generation displays. However, balancing the transmission performance and low-temperature deposition is the primary obstacle in the application of a-InGaZnO TFTs in the field of ultra-high resolution optoelectronic display. Here, we report that a-InGaZnO:O TFT prepared at room temperature has high transport performance, manipulating oxygen vacancy (VO) defects through an oxygen-doped a-InGaZnO framework. The main electrical properties of a-InGaZnO:O TFTs included high field-effect mobility (µFE) of 28 cm2/V s, a threshold voltage (Vth) of 0.9 V, a subthreshold swing (SS) of 0.9 V/dec, and a current switching ratio (Ion/Ioff) of 107; significant improvements over a-InGaZnO TFTs without oxygen plasma. A possible reason for this is that appropriate oxygen plasma treatment and room temperature preparation technology jointly play a role in improving the electrical performance of a-InGaZnO TFTs, which could not only increase carrier concentration, but also reduce the channel-layer surface defects and interface trap density of a-InGaZnO TFTs. These provides a powerful way to synergistically boost the transport performance of oxide TFTs fabricated at room temperature.

Fluorination-mitigated High-Current Degradation of Amorphous InGaZnO Thin-Film Transistors

Competition Between Heating and Cooling During Dynamic Self-Heating Degradation of Amorphous InGaZnO Thin-Film Transistors

Self-Heating Stress-Induced Severe Humps in Transfer Characteristics of Amorphous InGaZnO Thin-Film Transistors

Roles of Hot Carriers in Dynamic Self-Heating Degradation of a-InGaZnO Thin-Film Transistors

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Performance Enhancement of InGaZnO Top-Gate Thin Film Transistor With Low-Temperature High-Pressure Fluorine Treatment

Asymmetry Degradation Behavior Under Forward and Backward Overlap Dynamical Stress in Large-Size Amorphous InGaZnO TFT

Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors

Thermal Annealing Improved Stability of Amorphous InGaZnO Thin-Film Transistors Under AC Bias Stresses

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

P‐18: Student Poster: Non‐Oxidizing Pre‐Annealing for Enhanced Fluorination of an Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor

Investigating the Back-Channel Effect and Asymmetric Degradation under Self-Heating Stress in Large Size A-Ingazno TFTs

24.3: Short‐Channel Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor Enabled by Thermal Dehydrogenation and Oxidizing Defect‐Suppression

Resilience of Fluorinated Indium-Gallium-Zinc Oxide Thin-Film Transistor Against Hydrogen-Induced Degradation

P‐1.5: Dynamic Current Stress‐Induced Instabilities of A‐ingazno TFTs

24‐2: Distinguished Student Paper: Fluorination for Enhancing the Resistance of Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor Against Hydrogen‐Induced Degradation

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature

Significant Degradation Reduction in Metal Oxide Thin-Film Transistors via the Interaction of Ionized Oxygen Vacancy Redistribution, Self-Heating Effect, and Hot Carrier Effect

Degradation Behavior of Etch-Stopper-Layer Structured A-Ingazno Thin-Film Transistors under Hot-Carrier Stress and Illumination

Ultra-thin top-gate insulator of atomic-layer-deposited HfO x for amorphous InGaZnO thin-film transistors