Abstract:Amorphous indium gallium zinc oxide (a-IGZO) has recently made significant advancement as a key material for electronic component design owing to its compatibility with complementary metal oxide semiconductor technologies. A comprehensive analysis of reliability-related issues is required to determine the true potential of a-IGZO-based devices for next-generation electronics applications. To address this objective, we electrically characterize scaled-channel a-IGZO thin film transistors (TFTs) under positive bias (temperature) stress (PB(T)S). Both PBS and PBTS are characterized by positive and negative Vth shift, respectively, during the various gate stresses. In particular, the negative Vth shift is explained by the generation of donor-like traps stimulated by ionization of oxygen vacancy/hydrogen at elevated temperature. The TFTs exhibit relatively decent stability during the PBS operation. The analysis of devices with variant channel dimensions implies that long-channel devices exhibit relatively higher stability and performance compared to the short-channel ones. We also observe that the Vth can be controllably adjusted by employing the top gate (TG) with bottom gate sweep. Moreover, the stress-induced partial recovery mechanism is experimentally observed owing to detrapping of charges. Generally, the reported results infer a perceptive understanding of scaled-channel a-IGZO-TFTs which helps with shaping performance-enhancement strategies.

Investigating the Back-Channel Effect and Asymmetric Degradation under Self-Heating Stress in Large Size A-Ingazno TFTs

Competition Between Heating and Cooling During Dynamic Self-Heating Degradation of Amorphous InGaZnO Thin-Film Transistors

Abnormal Threshold Voltage Shift Caused by Trapped Holes under Hot-Carrier Stress in A-Igzo TFTs

Asymmetry Degradation Behavior Under Forward and Backward Overlap Dynamical Stress in Large-Size Amorphous InGaZnO TFT

Self-Heating Stress-Induced Severe Humps in Transfer Characteristics of Amorphous InGaZnO Thin-Film Transistors

Degradation Behavior of Etch-Stopper-Layer Structured A-Ingazno Thin-Film Transistors under Hot-Carrier Stress and Illumination

Roles of Hot Carriers in Dynamic Self-Heating Degradation of a-InGaZnO Thin-Film Transistors

P‐1.5: Dynamic Current Stress‐Induced Instabilities of A‐ingazno TFTs

The Effect Of Asymmetrical Electrode Form After Negative Bias Illuminated Stress In Amorphous Igzo Thin Film Transistors (Vol 110, 103502, 2017)

Effects of Redundant Electrode Width on Stability of a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress

Current Temperature Stress Induced Threshold Degradation on Corbino A-Ingazno Transistors

Fluorination-mitigated High-Current Degradation of Amorphous InGaZnO Thin-Film Transistors

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Abnormal Bias Instabilities Induced by Lateral H2O Diffusion into Top-Gate Insulator of A-Ingazno Thin-Film Transistors

Investigation of an Anomalous Hump Phenomenon in Via-Type Amorphous In-Ga-Zn-O Thin-Film Transistors under Positive Bias Temperature Stress

P‐1.1: Anomalous Dependence of Threshold Voltage on Channel Width and Drain Voltage in Back‐channel‐etched A‐igzo TFTs

Analysis of Channel-Length Dependence of Residual Hydrogen Diffusion From the Gate Insulator During Oxygen Annealing Treatment in IGZO TFTs

Abnormal Hump and Two-Step Degradation of Top Gate a-InGaZnO TFTs Under Positive Bias Stress

Two-step Degradation of A-Ingazno Thin Film Transistors under DC Bias Stress

Investigation of a Hump Phenomenon in Back-Channel-Etched Amorphous In-Ga-Zn-O Thin-Film Transistors under Negative Bias Stress