Abstract:Thin-film transistors (TFTs) with solutionprocessed indium oxide (In 2 O 3 ) as the channel layer and with aluminium oxide as the gate dielectric were fabricated. The fabricated In 2 O 3 TFTs are tested for reliability in low-voltage operation. Measurement results show that the threshold voltage (V th ) increases from 0.6 V to 1.4 V under positive bias stress (PBS) and decreases from 0.55 V to 0.22 V under negative bias stress (NBS). Upon relaxation for long enough time, Vth restores close to the pristine values. When switching the In 2 O 3 TFTs repeatedly by applying a pulsed voltage of ±3V to the gate, the Vth shift (ΔVth) depends on the pulse width. While ΔVth generally decreases with the pulse width under pulsed NBS, Vth instability is considerably worse under pulsed PBS, particularly when the pulse width is between 5 μs and 50 ms. Apart from revealing the differences in the trapping and de-trapping of electrons and holes at the In 2 O 3 /Al 2 O 3 interface, the results have implications for using the In 2 O 3 TFTs in circuits in which they are biased or switched repeatedly.

P‐1.1: Anomalous Dependence of Threshold Voltage on Channel Width and Drain Voltage in Back‐channel‐etched A‐igzo TFTs

Investigating the Back-Channel Effect and Asymmetric Degradation under Self-Heating Stress in Large Size A-Ingazno TFTs

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Investigation of an Anomalous Hump Phenomenon in Via-Type Amorphous In-Ga-Zn-O Thin-Film Transistors under Positive Bias Temperature Stress

Abnormal Threshold Voltage Shift Caused by Trapped Holes under Hot-Carrier Stress in A-Igzo TFTs

Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness

P-1.14: The Influence of Dual-channel on the Performance of Self-Align Top-Gate IGZO Thin Film Transistors

Effects of Etching Residue on Positive Shift of Threshold Voltage in Amorphous Indium–Zinc-Oxide Thin-Film Transistors Based on Back-Channel-Etch Structure

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Asymmetry Degradation Behavior Under Forward and Backward Overlap Dynamical Stress in Large-Size Amorphous InGaZnO TFT

Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down Via-Contact Type Amorphous InGaZnO Thin-Film Transistors

Threshold Voltage Instabilities In Perpetual Switching Of Low-Voltage Thin-Film Transistors With Solution-Processed In2o3 Channel Layer

P‐13: Electrical Characteristics and Stability of Double‐Gate A‐igzo Thin Film Transistors with Self‐Aligned Top‐Gate

P‐1.5: Dynamic Current Stress‐Induced Instabilities of A‐ingazno TFTs

P‐1.23: High‐Performance Dual‐Gate A‐igzo/a‐izo Thin‐Film Transistors

Abnormal Back Channel Leakage under Large Drain Voltage in Short Channel Organic Thin-Film Transistors

High‐Performance Back‐Channel‐Etched Thin‐Film Transistors with an InGaO/InZnO Stacked Channel

Threshold Voltage Instabilities in Perpetual Switching of Low-Voltage Thin-Film Transistors with Solution-Processed In<inf>2</inf>O<inf>3</inf> Channel Layer

Effect of source–drain contact and channel length on the performance of vertical thin-film transistors

Investigation of a Hump Phenomenon in Back-Channel-Etched Amorphous In-Ga-Zn-O Thin-Film Transistors under Negative Bias Stress

Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V)