Abstract:In the fabrication of flexible a‐IGZO and LTPS thin film transistor (TFT) hybrid backplane, various threshold voltage (Vth) of the a‐IGZO TFT was achieved in this paper by regulating the O 2 /Ar ratio during the deposition of a‐IGZO film by sputtering. The results show that the Vth increases with the increase of the O 2 /Ar ratio, and the reliability tests indicate that in a certain range negative adjustment of Vth can significantly improve the positive bias temperature instability (PBTI) of IGZO TFT, and maintain good electrical uniformity. The increase of the O 2 /Ar ratio reduces the number of oxygen vacancy (Vo) in the a‐IGZO channel, and thereby Vth is positively shifted, which is confirmed by the TCAD simulation. The Vth value can indicate the Vo concentration in a‐IGZO TFT channel partly, and appropriately higher amount of Vo is beneficial to improve the PBTI, which is attributed to Fermi level (EF) shifting closer to conduction band. Raised EF means less unoccupied trap states, resulting in less carrier trapping under PBTI. Furthermore, the research also explores different a‐IGZO channel thicknesses and finds that when the Vth values are similar, thinner channel layers endow a‐IGZO TFT with improved PBTI. By optimizing the Vth and channel thickness, a‐IGZO TFTs with a channel thickness of 25nm and a Vth value of 0.2V have been prepared in a hybrid backplane. Under positive bias temperature stress for 5 hours, the Vth is positively shifted less than 0.5 V, which could lay the foundation for achieving high‐reliability flexible backplane for AMOLEDs.

Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Dual Gate Indium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

P-1.14: The Influence of Dual-channel on the Performance of Self-Align Top-Gate IGZO Thin Film Transistors

P‐13: Electrical Characteristics and Stability of Double‐Gate A‐igzo Thin Film Transistors with Self‐Aligned Top‐Gate

Double Gated a-InGaZnO TFT Properties Based on Quantitative Defect Analysis and Computational Modeling

P‐1.1: Anomalous Dependence of Threshold Voltage on Channel Width and Drain Voltage in Back‐channel‐etched A‐igzo TFTs

Dual In-Plane-Gate Oxide-Based Thin-Film Transistors with Tunable Threshold Voltage

Influence of Channel Layer and Passivation Layer on the Stability of Amorphous InGaZnO Thin Film Transistors.

A gate-stress-induced ΔVth model reflecting impact of electric field in IGZO thin film transistors

Simulation study on the active layer thickness and the interface of a-IGZO-TFT with double active layers

Threshold Voltage Instabilities In Perpetual Switching Of Low-Voltage Thin-Film Transistors With Solution-Processed In2o3 Channel Layer

P‐12: Improve the Reliability of a‐IGZO TFT through Optimizing the Threshold Voltage and Channel Thickness in AMOLED Hybrid Backplane

Characteristics of amorphous In-Ga-Zn-O thin-film-transistors with channel layer deposited by bias sputtering

Effect of active layer thickness on device performance of a-LZTO thin-film transistors

Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors

Effect Of Active Layer Deposition Temperature On The Performance Of Sputtered Amorphous In-Ga-Zn-O Thin Film Transistors

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display