Abstract:Thin film transistors based on a‐IGZO/a‐ITZO/a‐IGZO heterostructural channel are fabricated. The TFTs exhibited outstanding electrical performances, with field effect mobility exceeding 50 cm2V‐1s‐1, ideally small positive/negative‐bias‐stress voltage shifts down to 0.1/0.004 V, and optimized sub‐threshold swing as low as 80 mV dec−1. Improvements in the quality of transport interface verified by magnetotransport and Hall effect account for enhanced transport performances and device reliabilities. Thin film transistors (TFTs) based on amorphous oxide semiconductors (AOS) are promising candidates for panel displays. However, the trade‐off between mobility and reliability in AOS‐TFTs hinders their further applications in next‐generation display techniques and newly developed logic and memory circuits. Here, a structural strategy is proposed for the mobility‐reliability trade‐off, via a triple‐layer channel containing a Ga‐free high‐mobility layer (amorphous InSnZnO, a‐ITZO) sandwiched by two Ga‐rich layers (amorphous InGaZnO, a‐IGZO) with higher reliability. Gate‐induced carrier accumulation is verified mainly being energetically confined within the high mobility a‐ITZO layer, at the newly defined a‐ITZO/a‐IGZO interface. Compared to single layer a‐ITZO‐TFTs, triple‐channel a‐IGZO/a‐ITZO/a‐IGZO TFTs (GTG‐TFTs) exhibit outstanding stability and electrical transport performances, with suppressed positive/negative‐bias‐stress voltage shifts from 1/0.3 to 0.1/0.004 V, enhanced field effect mobility from ≈40 to 56 cm2V−1s−1, and optimized sub‐threshold swing down to 80 mV dec−1. Further numerical simulations and charge transport characterizations, including magnetotransport and gate‐induced Hall effect, indicate that charge transport in tri‐layer structure is less affected by energetic disorders present at gate insulator interfaces.

Simulation study on the active layer thickness and the interface of a-IGZO-TFT with double active layers

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

Design and analysis of novel tri‐active layer channel amorphous‐IGZO thin‐film transistor

P‐1.11: Performance Improvement of a‐IGZO Thin‐Film Transistor By Using Ta 2 O 5 /SiO 2 Double‐layer Gate Dielectric

Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness

P-1.14: The Influence of Dual-channel on the Performance of Self-Align Top-Gate IGZO Thin Film Transistors

Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length

Double Gated a-InGaZnO TFT Properties Based on Quantitative Defect Analysis and Computational Modeling

High Mobility Metal-Oxide Thin Film Transistors with IGZO/In2O3 Dual-Channel Structure

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Improvement of Mobility and Stability in Oxide Thin-Film Transistors Using Triple-Stacked Structure

High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs with 4 Nm-Thick Atomic-Layer-Deposited AlOx Insulator

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

The improved properties of solution-based InGaSnO (IGTO) thin film transistor using the modification of InZnO (IZO) layer

Enhancing the Carrier Mobility and Bias Stability in Metal–Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure

Self-aligned Top-Gate Amorphous Oxide Thin-Film Transistors with IZO/IGZO Stacked Active Layer and Al Reacted Source/drain Region

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method