Abstract:Thin film transistors based on a‐IGZO/a‐ITZO/a‐IGZO heterostructural channel are fabricated. The TFTs exhibited outstanding electrical performances, with field effect mobility exceeding 50 cm2V‐1s‐1, ideally small positive/negative‐bias‐stress voltage shifts down to 0.1/0.004 V, and optimized sub‐threshold swing as low as 80 mV dec−1. Improvements in the quality of transport interface verified by magnetotransport and Hall effect account for enhanced transport performances and device reliabilities. Thin film transistors (TFTs) based on amorphous oxide semiconductors (AOS) are promising candidates for panel displays. However, the trade‐off between mobility and reliability in AOS‐TFTs hinders their further applications in next‐generation display techniques and newly developed logic and memory circuits. Here, a structural strategy is proposed for the mobility‐reliability trade‐off, via a triple‐layer channel containing a Ga‐free high‐mobility layer (amorphous InSnZnO, a‐ITZO) sandwiched by two Ga‐rich layers (amorphous InGaZnO, a‐IGZO) with higher reliability. Gate‐induced carrier accumulation is verified mainly being energetically confined within the high mobility a‐ITZO layer, at the newly defined a‐ITZO/a‐IGZO interface. Compared to single layer a‐ITZO‐TFTs, triple‐channel a‐IGZO/a‐ITZO/a‐IGZO TFTs (GTG‐TFTs) exhibit outstanding stability and electrical transport performances, with suppressed positive/negative‐bias‐stress voltage shifts from 1/0.3 to 0.1/0.004 V, enhanced field effect mobility from ≈40 to 56 cm2V−1s−1, and optimized sub‐threshold swing down to 80 mV dec−1. Further numerical simulations and charge transport characterizations, including magnetotransport and gate‐induced Hall effect, indicate that charge transport in tri‐layer structure is less affected by energetic disorders present at gate insulator interfaces.

High Mobility Metal-Oxide Thin Film Transistors with IGZO/In2O3 Dual-Channel Structure

P-1.14: The Influence of Dual-channel on the Performance of Self-Align Top-Gate IGZO Thin Film Transistors

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate

High-Performance Dual-Layer Channel Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated In Different Oxygen Contents At Low Temperature

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

High-Performance Mo-Zn-O Oxide Transistors with Double Channels

Fabrication and performance of indium oxide based transparent thin film transistors

Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Sub-1.2 nm Equivalent Oxide Thickness

High-performance dual-layer channel ITO/TZO TFTs fabricated on glass substrate

Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length

High Resolution Inkjet Printed Oxide Thin Film Transistors with Self-Aligned Fine Channel Bank Structure.

Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric

P‐1.23: High‐Performance Dual‐Gate A‐igzo/a‐izo Thin‐Film Transistors

Self-aligned Top-Gate Amorphous Oxide Thin-Film Transistors with IZO/IGZO Stacked Active Layer and Al Reacted Source/drain Region

Enhanced Electrical Properties of Dual-Layer Channel ZnO Thin Film Transistors Prepared by Atomic Layer Deposition

High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer

High-performance Fully Transparent Al–Sn–Zn–O Thin-Film Transistors Using Double-Channel Structures

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Flexible Dual-layer Channel Gallium-doped ZnO Thin-film Transistors Fabricated on Plastic Substrates at Room Temperature