Abstract:In recent years, considerable attention has been paid to amorphous indium gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) for high performance flat panel display, such as liquid-crystal displays (LCDs), active-matrix organic light-emitting diode (AMOLED) display and flexible display. This is because IGZO TFTs are more suitable for pixels and circuit integrations on display panel than the conventional silicon-based devices. The merits of IGZO TFT technology include high mobility, decent reliability, low manufacturing cost, and excellent uniformity over large fabrication area. However, it was reported that the electrical characteristics of IGZO TFT are susceptible to shift after electrical aging measurement under illumination, which is caused by the activation of trapped electrons from sub-gap states to conducting states. Therefore, it is necessary to introduce light shielding layer to suppress the electrical characteristic shift under illumination aging measurements. Lim et al. demonstrated the characteristics of IGZO TFT with additional light shielding metal layer, and proved that the threshold voltage of TFT can be tuned linearly by adjusting the biasing voltage of the light shielding metal. Taking advantage of this tunable threshold voltage, AMOLED pixel circuit with a threshold voltage shift compensation function can be implemented. However, drawback of this method lies in the adding of additional biasing line, which increases the circuit area and restricts the integration of high-resolution pixel circuits. Thus, Zan et al. proposed adopting floating (unbiased) light shielding metal layer to improve the characteristics of device. However, Zeng et al. demonstrated the abnormal output characteristics of the IGZO TFT, as it cannot be saturated due to the introduction of floating light shielding metal layer. It seems that the IGZO TFT with floating metal is different from the conventional double-gate or single gate structure. To date, the current conducting mechanism of IGZO TFT with floating metal has not been discussed yet. In this paper, the distribution of electrical potential in the IGZO TFT with a cross sectional view is thoroughly analyzed. It is confirmed that the abnormal output characteristic of IGZO TFT is caused by the capacitive coupling between the floating gate and the drain electrode of the transistor. On the basis of the voltage distribution relationship between the equivalent capacitances, a threshold-voltage-dependent current-voltage model is proposed. The simulated results by technology computer-aided design tool and those by the proposed model are in good agreement with each other. Therefore, the mechanism of floating gate effect for IGZO TFT is comprehensively demonstrated. The illustrated conducting mechanism and the proposed current-voltage model are helpful in developing the device and process of IGZO TFT with novel structure.

Double Gated a-InGaZnO TFT Properties Based on Quantitative Defect Analysis and Computational Modeling

CHARACTERISTICS OF DOUBLE-GATE a-IGZO TFT

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO2 gate dielectric through insertion of SiO2 interlayer

Self-aligned Top-Gate InGaZnO Thin Film Transistors Using SiO2/Al2O3 Stack Gate Dielectric

Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatings

P‐1.11: Performance Improvement of a‐IGZO Thin‐Film Transistor By Using Ta 2 O 5 /SiO 2 Double‐layer Gate Dielectric

P‐9: Improved Electrical Stability of Double‐Gate A‐igzo TFTs

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors

Floating Gate Effect in Amorphous InGaZnO Thin-Film Transistor

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Top-Gate Amorphous Indium-Gallium-Zinc-OxideThin-Film Transistors With Magnesium Metallized Source/Drain Regions

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Double-stacked gate insulators SiOx/TaOx for flexible amorphous InGaZnO thin film transistors

18‐4: Mechanical Stress‐Induced Recoverable and Unrecoverable Deteriorations of Flexible A‐ingazno Thin‐Film Transistor

Analytical Channel Potential Model of Amorphous InGaZnO Thin-Film Transistors with Synchronized Symmetric Dual-Gate

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Robust Mobility Enhancement and Comprehensive Reliability Evaluation for Amorphous InGaZnO TFT by Double Layers With Quantum Well Structures