Abstract:Al2O3, as one of the gate dielectric materials for thin film transistors (TFTs), has been extensively investigated because of its large bandgap, high breakdown field, and good thermal stability. However, the further development of Al2O3 thin films is limited by the presence of defects such as oxygen vacancies, self-interstitial atoms, or impurity elements. To overcome this obstacle, we have developed a novel method for fabricating Al2O3 thin films by using the atomic layer deposition (ALD) technique. This method replaces the conventional Trimethylaluminium (TMA)/H2O cycles with TMA/TMA/H2O/H2O cycles (referred to as ‘double cycles’), to deposit the Al2O3. The 5-nm ultrathin Al2O3 film showed a high areal capacitance of 660 nF/cm2 at 20 Hz, and a relatively low current density of 10−8 A/cm2 at 1 MV/cm. InGaZnO (IGZO) TFTs with ultrathin Al2O3 gate dielectric grown by double cycles exhibited outstanding performances, such as a near theoretical limit subthreshold swing (SS) of 70 mV/decade, a higher on/off current ratio $(I_{\mathrm{ on}} / I_{\mathrm{ off}}$ ) of 106, an increased field-effect mobility ( $\mu $ ) of 6.5 cm2/Vs, a lower threshold voltage $(V_{\mathrm{ th}})$ of 0.2 V, and a low operating voltage of 3 V. These results are superior to the IGZO TFTs with Al2O3 dielectrics deposited using the single TMA/H2O cycle. Therefore, the implementation of ‘double cycles’ in the fabrication of dielectrics through ALD demonstrates considerable potential for future application in low-power electronic devices.

Tuning the Threshold Voltage of Double-Gate Low-Voltage Transparent Oxide-Based Tfts by A Lateral In-Plane Gate

Dual In-Plane-Gate Oxide-Based Thin-Film Transistors with Tunable Threshold Voltage

Low-Voltage Oxide-Based Tfts Self-Assembled on Paper Substrates with Tunable Threshold Voltage

Transparent In-Plane-Gate Junctionless Oxide-Based TFTs Directly Written by Laser Scribing

In-Plane-Gate Oxide-Based Thin-Film Transistors Self-Aligned on Stacked Self-Assembled Monolayer/$\hbox{SiO}_{2}$ Electrolyte Dielectrics

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated By Sio2-Based Solid Electrolyte

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Anomalous Threshold Voltage Shift and Surface Passivation of Transparent Indium–Zinc–Oxide Electric-Double-Layer TFTs

A low-temperature photoresist-based film-profile engineering scheme for fabricating bottom- and double-gated indium–gallium–zinc oxide TFTs

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Tuning the Threshold Voltage of an Oxide Thin-Film Transistor by Electron Injection Control Using a p-n Semiconductor Heterojunction Structure

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Solution-Processed Low-Operating-Voltage Thin-Film Transistors with Bottom-Gate Top-Contact Structure

Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates

Self-Assembled In-Plane Gate Oxide-Based Homojunction Thin-Film Transistors

Ultralow-Voltage Transparent Electric-Double-Layer Thin-Film Transistors Processed at Room-Temperature

Sub-100 Nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors with Gate Insulator of 4 Nm Atomic-Layer-Deposited AlOx

Low-Voltage Junctionless Oxide-Based Thin-Film Transistors Self-Assembled by A Gradient Shadow Mask

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by $\Hbox{sio}_{2}$-Based Solid Electrolyte

Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness