Abstract:Organic semiconductors (OSCs) constitute a class of organic materials containing densely packed, overlapping conjugated molecular moieties that enable charge carrier transport. Their unique optical, electrical, and magnetic properties have been investigated for use in next-generation electronic devices, from roll-up displays and radiofrequency identification (RFID) to biological sensors. The organic field-effect transistor (OFET) is the key active element for many of these applications, but the high values, poor definition, and long-term instability of the threshold voltage (V(T)) in OFETs remain barriers to realization of their full potential because the power and control circuitry necessary to compensate for overvoltages and drifting set points decrease OFET practicality. The drifting phenomenon has been widely observed and generally termed "bias stress." Research on the mechanisms responsible for this poor V(T) control has revealed a strong dependence on the physical order and chemical makeup of the interfaces between OSCs and adjacent materials in the OFET architecture. In this Account, we review the state of the art for tuning OFET performance via chemical designs and physical processes that manipulate V(T). This parameter gets to the heart of OFET operation, as it determines the voltage regimes where OFETs are either ON or OFF, the basis for the logical function of the devices. One obvious way to decrease the magnitude and variability of V(T) is to work with thinner and higher permittivity gate dielectrics. From the perspective of interfacial engineering, we evaluate various methods that we and others have developed, from electrostatic poling of gate dielectrics to molecular design of substituted alkyl chains. Corona charging of dielectric surfaces, a method for charging the surface of an insulating material using a constant high-voltage field, is a brute force means of shifting the effective gate voltage applied to a gate dielectric. A gentler and more direct method is to apply surface voltage to dielectric interfaces by direct contact or postprocess biasing; these methods could also be adapted for high throughput printing sequences. Dielectric hydrophobicity is an important chemical property determining the stability of the surface charges. Functional organic monolayers applied to dielectrics, using the surface attachment chemistry made available from "self-assembled" monolayer chemistry, provide local electric fields without any biasing process at all. To the extent that the monolayer molecules can be printed, these are also suitable for high throughput processes. Finally, we briefly consider V(T) control in the context of device integration and reliability, such as the role of contact resistance in affecting this parameter.

Tuning the Threshold Voltage of an Oxide Thin-Film Transistor by Electron Injection Control Using a p-n Semiconductor Heterojunction Structure

Control of Threshold Voltage in ZnO/Al2O3 Thin-Film Transistors through Al2O3 Growth Temperature

Tuning the Threshold Voltage of Double-Gate Low-Voltage Transparent Oxide-Based Tfts by A Lateral In-Plane Gate

Dual In-Plane-Gate Oxide-Based Thin-Film Transistors with Tunable Threshold Voltage

Interface Engineering for Precise Threshold Voltage Control in Multilayer-Channel Thin Film Transistors

Titanium doped Zinc-oxide based Thin Film Transistors: Optimization of the source/drain materials

Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy

P-22: Turn-On Voltage Modulation of Indium-Gallium-Zinc-Oxide Thin-Film Transistors Through Thermal Annealing Processes

Improvement of Electrical Characteristics and Stability in Low-Voltage Indium Oxide Thin-Film Transistors by Using Tungsten Doping

Promotion of Processability in a p-Type Thin-Film Transistor Using a Se-Te Alloying Channel Layer

A ternary gate-connected threshold switching thin-film transistor

Control of Electron Tunnelling by Fine Band Engineering of Semiconductor Potential Barriers.

Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination.

Strain modulation effects on Two-Dimensional tellurium for advanced p-Type transistor applications

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

Wafer-Scale Atomic Layer-Deposited TeO x /Te Heterostructure P-Type Thin-Film Transistors

Through thick and thin: tuning the threshold voltage in organic field-effect transistors

Onset Voltage Shift in the Organic Thin-Film Transistor with an Atomic-Layer-deposited Charge-Injection Interlayer

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Realization of Tunable-Performance in Atomic Layer Deposited Hf-doped In2O3 Thin Film Transistor Via Oxygen Vacancy Modulation.

Modulation of the Al/Cu2O Schottky Barrier Height for p-Type Oxide TFTs Using a Polyethylenimine Interlayer