Abstract:A reliable one‐step van der Waals integration technique is developed for centimeter‐scale transfer printing of multilayer top‐gate stacks. This technique enables the realization of superior electrical performance and threshold voltage control in MoS2 transistors. Depletion‐mode Al‐gated transistors and enhancement‐mode Au‐gated transistors are utilized to construct inverters, logic gates, static random‐access memory, and ring oscillators, demonstrating the functionality of multi‐threshold 2D circuits. Transition‐metal dichalcogenides (TMDs), as atomically thin semiconductors, have shown immense promise for next‐generation electronics due to their high mobility and potential for creating van der Waals heterostructures. However, precise control of the threshold voltage (Vth) in field‐effect transistors (FETs) remains a significant challenge, impeding the development of 2D material circuits with tailored electronic functions. Herein, a graphene‐assisted one‐step van der Waals integration technique is presented for fabricating multi‐threshold 2D functional circuits. Graphene's unique property of having a surface without dangling bonds is utilized as an intermediary layer, allowing for the transfer of electrodes with various work functions and high‐κ dielectric layers onto 2D channel materials in a single step. This technique has successfully produced Al‐gated MoS2 FETs with a Vth of −0.2 V and Au‐gated MoS2 FETs with a Vth of 1.9 V. This precision enables the development of functional devices such as rail‐to‐rail inverters with large noise margins. Furthermore, more complex multi‐threshold 2D circuits are achieved, including basic logic gates (NOT, NAND, NOR), six‐transistor static random‐access memory (6T‐SRAM), and ring oscillators (RO). This work showcases a scalable and effective strategy for threshold voltage engineering in 2D material‐based circuits, paving the way for sophisticated electronic and optoelectronic applications.

Interface Engineering for Precise Threshold Voltage Control in Multilayer-Channel Thin Film Transistors

Performance of Thin-Film Transistors with Ultrathin Ni-MILC Polycrystalline Silicon Channel Layers

Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

Tuning the Threshold Voltage of an Oxide Thin-Film Transistor by Electron Injection Control Using a p-n Semiconductor Heterojunction Structure

The Optimization and Fabrication of High Electron Mobility Transistors Integrated with Microstructure

Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

Impact of layer thickness on the operating characteristics of In2O3/ZnO heterojunction thin-film transistors

Thin Film Transistors Based on In-Zn-Ti-O Oxide Channel Layer

Control of Threshold Voltage in ZnO/Al2O3 Thin-Film Transistors through Al2O3 Growth Temperature

Enhanced Electrical Properties of Dual-Layer Channel ZnO Thin Film Transistors Prepared by Atomic Layer Deposition

Realization of forming-free Ag/ZrO2-based threshold selector with high selectivity by optimizing film thickness and scaling down electrode size

Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing

Performance Improvement of Amorphous Thin-Film Transistors with Solution-Processed InZnO/InMgZnO Bilayer Channels

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers

One‐Step Van der Waals Integration of Multi‐Threshold 2D Functional Circuits

Solution Process-Based Thickness Engineering of InZnO Semiconductors for Oxide Thin-Film Transistors with High Performance and Stability

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

Top-gate thin-film transistors with amorphous ZnSnO channel layers prepared by pulsed plasma deposition

Viable Approach of Tuning Oxide Semiconductor Thin Films in Solution‐Processed Heterojunction Thin Films Transistors for Both Higher Performances and Stability

Control of the threshold voltage in ZnO nanobelt field-effect transistors by using MoO x thin film.