Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

The Optimization and Fabrication of High Electron Mobility Transistors Integrated with Microstructure

Fabrication and Characterization of Gated Carbon Nanotube Emitters in A Trench Structure

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Fabrication of AlGaN/GaN High-Electron-mobility Transistors

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

Fabrication and Characterization of Molecular Scale Field-Effect Transistors

Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact

Atomically Thin Van Der Waals Tunnel Field-Effect Transistors and Its Potential for Applications

New structure transistors for advanced technology node CMOS ICs

High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide

High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors

Fabrication and Characterization of a Novel Si Line Tunneling TFET with High Drive Current

Optimizing the fabrication process for high performance graphene field effect transistors.

Contact and injection engineering for low SS reconfigurable FETs and high gain complementary inverters

Control of Electron Tunnelling by Fine Band Engineering of Semiconductor Potential Barriers.

1‐1: Oxide Semiconductor Thin‐Film Transistors with High Mobility and Stability

Mm-Wave Performance of 50nm T-Gate AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistors with Ft of 200 GHz

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

HIGHLY SCALED CMOS DEVICE TECHNOLOGIES WITH NEW STRUCTURES AND NEW MATERIALS

High mobility amorphous InGaZnO thin film transistor with single wall carbon nanotubes enhanced-current path

Post-CMOS Process for High-Aspect-ratio Monolithically Integrated Single Crystal Silicon Microstructures