Abstract:A design concept of carrier transport/relaxation bilayer amorphous‐oxide‐semiconductor TFTs is demonstrated to avoid the bucket effect inevitable in single‐layer devices. In&Sn‐rich InSnZnO/InSnZnO:Pr bilayer TFTs that combine high mobility (75.5 cm2 V−1 s−1), robust normalized drain current (225 μA), and satisfactory NBIS/PBTS stability (voltage shift ∼ −1.64/0.76 V) are successfully developed. Amorphous oxide semiconductor thin‐film transistors (AOS TFTs) are ever‐increasingly utilized in displays. However, to bring high mobility and excellent stability together is a daunting challenge. Here, the carrier transport/relaxation bilayer stacked AOS TFTs are investigated to solve the mobility‐stability conflict. The charge transport layer (CTL) is made of amorphous In‐rich InSnZnO, which favors big average effective coordination number for all cations and more edge‐shared structures for better charge transport. Praseodymium‐doped InSnZnO is used as the charge relaxation layer (CRL), which substantially shortens the photoelectron lifetime as revealed by femtosecond transient absorption spectroscopy. The CTL and CRL with the thickness suitable for industrial production respectively afford minute potential barrier fluctuation for charge transport and fast relaxation for photo‐generated carriers, resulting in transistors with an ultrahigh mobility (75.5 cm2 V−1 s−1) and small negative‐bias‐illumination‐stress/positive‐bias‐temperature‐stress voltage shifts (−1.64/0.76 V). The design concept provides a promising route to address the mobility‐stability conflict for high‐end displays.

1‐1: Oxide Semiconductor Thin‐Film Transistors with High Mobility and Stability

A Transfer Method for High‐Mobility, Bias‐Stable, and Flexible Organic Field‐Effect Transistors

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Thin-film Transistors Based on Poly(3,3‴-Dialkyl-quarterthiophene) and Zinc Oxide Nanowires with Improved Ambient Stability

Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors

Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways.

Mobility–stability trade-off in oxide thin-film transistors

High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

Full-solution-processed High Mobility Zinc-Tin-oxide Thin-Film-transistors

High Mobility Wide Bandgap Polymer Realized by a Combined Modification Strategy of Processing Solvent and Dielectric Interface

High Mobility Solution-Processed C-8-BTBT Organic Thin-Film Transistors Via UV-ozone Interface Modification

High-mobility, Air Stable Bottom-Contact N-Channel Thin Film Transistors Based on N,N′-ditridecyl Perylene Diimide

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Homojunction Structure Amorphous Oxide Thin Film Transistors with Ultra-High Mobility

High-Mobility Flexible Oxyselenide Thin-Film Transistors Prepared by a Solution-Assisted Method

High-Mobility and Good-Stability Thin-Film Transistors with Scandium-Substituted Indium Oxide Semiconductors

Solution-Crystallized Organic Semiconductors with High Carrier Mobility and Air Stability

A Stable Solution-Processed Polymer Semiconductor with Record High-Mobility for Printed Transistors

High-mobility Solution-Processed Tin Oxide Thin-Film Transistors with High-Κ Alumina Dielectric Working in Enhancement Mode.

Field‐Effect Transistors: A Cofacially Stacked Electron‐Deficient Small Molecule with a High Electron Mobility of over 10 Cm2 V−1 S−1 in Air (adv. Mater. 48/2015)

High-performance Organic Thin-film Transistors: Principles and Strategies