Field‐Effect Transistors: A Cofacially Stacked Electron‐Deficient Small Molecule with a High Electron Mobility of over 10 Cm2 V−1 S−1 in Air (adv. Mater. 48/2015)

Jin‐Hu Dou,Yu‐Qing Zheng,Ze‐Fan Yao,Ting Lei,Xingxing Shen,Xu‐Yi Luo,Zhi‐Ao Yu,Shi‐Ding Zhang,Guangchao Han,Zhi Wang,Yuanping Yi,Jie‐Yu Wang,Jian Pei
DOI: https://doi.org/10.1002/adma.201570334
IF: 29.4
2015-01-01
Advanced Materials
Abstract:Compared with abundant p-type organic semiconductors with high mobilities, n-type semiconductors with mobilities over 1 cm2 V−1 s−1 are rare. On page 8051, Y. Yi, J. Pei, and co-workers report a new small molecule, F4-BDOPV, with unprecedentedly high electron mobilities of up to 12.6 cm2 V−1 s−1. This is the first time that air-stable n-type organic semiconductors have shown mobilities surpassing 10 cm2 V−1 s−1, an important benchmark for practical applications.
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