Abstract:Electronic devices based on organic semiconductors offer an attractive alternative to conventional inorganic devices due to potentially lower costs, simpler packaging and compatibility with flexible substrates1,2. As is the case for silicon-based microelectronics, the use of complementary logic elements—requiring n- and p-type semiconductors whose majority charge carriers are electrons and holes, respectively—is expected to be crucial to achieving low-power, high-speed performance. Similarly, the electron-segregating domains of photovoltaic assemblies require both n- and p-type semiconductors3,4,5. Stable organic p-type semiconductors are known6, but practically useful n-type semiconductor materials have proved difficult to develop, reflecting the unfavourable electrochemical properties of known, electron-demanding polymers7. Although high electron mobilities have been obtained for organic materials, these values are usually obtained for single crystals at low temperatures, whereas practically useful field-effect transistors (FETs) will have to be made of polycrystalline films that remain functional at room temperature. A few organic n-type semiconductors that can be used in FETs are known, but these suffer from low electron mobility, poor stability in air and/or demanding processing conditions8,9,10. Here we report a crystallographically engineered naphthalenetetracarboxylic diimide derivative that allows us to fabricate solution-cast n-channel FETs with promising performance at ambient conditions. By integrating our n-channel FETs with solution-deposited p-channel FETs, we are able to produce a complementary inverter circuit whose active layers are deposited entirely from the liquid phase. We expect that other complementary circuit designs11 can be realized by this approach as well.

High Mobility, Air Stable, Organic Single Crystal Transistors of an N-Type Diperylene Bisimide

A Transfer Method for High‐Mobility, Bias‐Stable, and Flexible Organic Field‐Effect Transistors

Single Mesowire Transistor from Perylene Tetracarboxylic Diimide

High Performance N-Type Single Crystalline Transistors of Naphthalene Bis(dicarboximide) and Their Anisotropic Transport in Crystals

High performance, air stable n-type single crystal transistors based on core-tetrachlorinated perylene diimides.

High Mobility n‐Type Imide‐Based Semiconductor with Unusual Single‐Crystal Packing Structure in Solution‐Processed Thin Film

N-Alkyl substituted di(perylene bisimides) as air-stable electron transport materials for solution-processible thin-film transistors with enhanced performance

Field‐Effect Transistors: A Cofacially Stacked Electron‐Deficient Small Molecule with a High Electron Mobility of over 10 Cm2 V−1 S−1 in Air (adv. Mater. 48/2015)

High-Performance Solution-Deposited Ambipolar Organic Transistors Based on Terrylene Diimides

A soluble and air-stable organic semiconductor with high electron mobility

High-performance $n$-type organic field-effect transistors with ionic liquid gates

Air-stable N-Type Semiconductor: Core-Perfluoroalkylated Perylene Bisimides.

N-Type Semiconducting Polymers Based on an Bithiophene Imide-Bridged Isoindigo for Organic Field-Effect Transistors

n-Type organic light-emitting transistors with high mobility and improved air stability

Isothianaphthene Diimide: an Air-Stable N-Type Semiconductor

Diketopyrrolopyrrole-based small molecules for solution-processed n-channel organic thin film transistors

Laterally Expanded Rylene Diimides with Uniform Branched Side Chains for Solution-Processed Air Stable N-Channel Thin Film Transistors

Use of a 1H-benzoimidazole derivative as an n-type dopant and to enable air-stable solution-processed n-channel organic thin-film transistors.

Optimization of Alkyl Side Chain Length in Polyimide for Gate Dielectrics to Achieve High Mobility and Outstanding Operational Stability in Organic Transistors

A high mobility air-stable n-type organic small molecule semiconductor with high UV–visible-to-NIR photoresponse

Air Stable N-Channel Organic Semiconductors for Thin Film Transistors Based on Fluorinated Derivatives of Perylene Diimides