n-Type organic light-emitting transistors with high mobility and improved air stability

Lanchao Ma,Dashan Qin,Yunqi Liu,Xiaowei Zhan

DOI: https://doi.org/10.1039/c7tc04556e

IF: 6.4

2018-01-01

Journal of Materials Chemistry C

Abstract:The first example of n-type organic light-emitting transistors operated in air was demonstrated using perylene diimide as a charge-transporting and light-emitting layer.

materials science, multidisciplinary,physics, applied

What problem does this paper attempt to address?

A high mobility air-stable n-type organic small molecule semiconductor with high UV–visible-to-NIR photoresponse

Ying-Shi Guan,Jing Qiao,Yingying Liang,Hari Krishna Bisoyi,Chao Wang,Wei Xu,Daoben Zhu,Quan Li

DOI: https://doi.org/10.1038/s41377-022-00936-z

2022-07-28

Light: Science and Applications

Abstract:An organic semiconductor with high carrier mobility and efficient light absorption over a wide spectral range is of the most important yet challenging material for constructing a broadband responsive organic photodetector. However, the development of such organic semiconductors, especially for air-stable n-type organic small molecule semiconductors, is still at an early stage. Here we report the fabrication of high-performance n-type semiconducting crystalline nanosheets and the development of air-stable field-effect transistors, phototransistors, with high response over a broad spectrum. The n-type small molecule semiconductor is assembled into a crystalline nanosheet based on the solvent-phase interfacial self-assembly method. N-type field-effect transistors with high electron mobility are fabricated and their electrical performances exhibit excellent air stability. Impressively, the demonstrated phototransistors exhibit an ultrahigh responsivity over a wide spectral range from 365 to 940 nm, with a maximum photoresponsivity of 9.2 × 10 5 A W −1 and specific detectivity of 5.26 × 10 13 Jones, which is the best performance among the reported n-type organic small molecule-based phototransistors.
High-Performance n-type Polymer Field-effect Transistors with Exceptional Stability

Manikanta Makala,Maciej Barłóg,Derek Dremann,Salahuddin S. Attar,Edgar Gutierrez Fernandez,Mohammed Al-Hashimi,Oana Jurchescu

DOI: https://doi.org/10.1039/d4tc03294b

IF: 6.4

2024-09-21

Journal of Materials Chemistry C

Abstract:Development of organic field-effect transistors (OFETs) that simultaneously exhibit high-performance and high-stability is critical for complementary integrated circuits and other applications based on organic semiconductors. While progress has been made in enhancing p-channel devices, engineering competitive n-type organic transistors remains a formidable obstacle. Herein, we demonstrate the achievement of high-mobility n-type OFETs with unprecedented operational stability through innovative device and material engineering. Thin film transistors fabricated on donor-acceptor polymers based on indacenodithiazole (IDTz) and diketopyrrolopyrrole (DPP) units exhibit electron mobilities up to 1.3 cm2/Vs, along with a negligible change in mobility, and threshold voltage shift as low as 0.5 V under continuous bias stress of 60 V for both the gate-source and drain-source voltages persisting for more than 1000 min. These remarkable properties position our OFETs as formidable counterparts to p-type transistors, addressing a longstanding challenge in the field.

materials science, multidisciplinary,physics, applied
High-performance $n$-type organic field-effect transistors with ionic liquid gates

S. Ono,N. Minder,Z. Chen,A. Facchetti,A. F. Morpurgo

DOI: https://doi.org/10.1063/1.3493190

2010-10-05

Abstract:High-performance $n$-type organic field-effect transistors were developed with ionic-liquid gates and N,N$^"$-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these devices reproducibly operate in ambient atmosphere with negligible gate threshold voltage and mobility values as high as 5.0 cm$^2$/Vs. These mobility values are essentially identical to those measured in the same devices without the ionic liquid, using vacuum or air as the gate dielectric. Our results indicate that the ionic-liquid and $n$-type organic semiconductor interfaces are suitable to realize high-quality $n$-type organic transistors operating at small gate voltage, without sacrificing electron mobility.

Materials Science
Molecular n-type doping for air-stable electron transport in vacuum-processed n-channel organic transistors

Joon Hak Oh,Peng Wei,Zhenan Bao

DOI: https://doi.org/10.1063/1.3527972

IF: 4

2010-12-13

Applied Physics Letters

Abstract:The effects of n-type doping on the air-stability of vacuum-processed n-channel organic transistors have been investigated using perylene diimides and pyronin B as the active layer and dopant, respectively. Systematic studies on the influence of doping location revealed the n-type doping of bulk active layer or channel region significantly improves air-stability by compensating for the trapped electrons with the donated mobile electrons. Although n-type doping at the electrode contact could readily turn on the devices, it could not confer air-stable electron transport. The described approach would open up opportunities to enable and improve the stability of n-channel organic transistors in air.

physics, applied
High Mobility, Air Stable, Organic Single Crystal Transistors of an N-Type Diperylene Bisimide

Aifeng Lv,Sreenivasa R. Puniredd,Jiahui Zhang,Zhibo Li,Hongfei Zhu,Wei Jiang,Huanli Dong,Yudong He,Lang Jiang,Yan Li,Wojciech Pisula,Qing Meng,Wenping Hu,Zhaohui Wang

DOI: https://doi.org/10.1002/adma.201104987

IF: 29.4

2012-01-01

Advanced Materials

Abstract:A new n-type organic semiconductor, i.e., C12-4CldiPBI, is synthesized by a simple and facile route. Single crystal ribbons of C12-4CldiPBI are grown facilely by a solvent vapor diffusion strategy. Organic field-effect transistors based on individual ribbons are fabricated by a new technique named “Au stripe mask” method. All devices exhibit excellent n-type transistor behavior with negligible hysteresis, and all devices give an electron mobility over 1.0 cm2 V−1 s−1 with the highest mobility of 4.65 cm2 V−1 s−1. Moreover, the devices exhibit excellent air stability.
High-performance floating-gate organic phototransistors based on n-type core-expanded naphthalene diimides

Xianrong Gu,Yang Qin,Su Sun,Lidan Guo,Xiangwei Zhu,Xiangnan Sun

DOI: https://doi.org/10.1016/j.cclet.2022.03.029

IF: 9.1

2022-03-01

Chinese Chemical Letters

Abstract:In the field of organic phototransistor, achieving both broad-spectral and high photosensitivity has always been a big challenge. The innovation of device structure has previously proven to be a possible solution to this problem. Here in this study, a novel organic phototransistor based on a high mobility n-type small molecule as the conducting layer and an isolated bulk heterojunction light-absorbing layer as the floating gate has been demonstrated in this study. With the special designed device structure, the phototransistor shows extremely high sensitivity to broad spectral and weak light irradiation, and the photoresponsivity and photocurrent/dark-current ratio of the device can reach up to 4840 mA/W and 1.8 × 105 respectively. For conclusion, this study suggests a potential way to obtain high-performance phototransistors at room temperature, which will further promote the commercial application of organic phototransistors.

chemistry, multidisciplinary
Air Stable N-Channel Organic Semiconductors for Thin Film Transistors Based on Fluorinated Derivatives of Perylene Diimides

H. Z. Chen,M. M. Ling,X. Mo,M. M. Shi,M. Wang,Z. Bao

DOI: https://doi.org/10.1021/cm062352w

IF: 10.508

2007-01-01

Chemistry of Materials

Abstract:A series of n-type organic semiconductors based on perylene diimides were synthesized. These materials were fully characterized by FTIR and UV-vis spectra as well as elemental analysis. Thin film transistors (TFTs) using a top-contact geometry were fabricated by vapor deposition of these perylene diimide derivatives as the semiconductive channel on surface treated SiO2/Si substrates at various substrate temperatures. The measured TFT performance depended heavily on the type and the number of substituents. We found higher field-effect mobilities for compounds with stronger electron-withdrawing substituents. TFTs with fluorinated perylene diimides showed much better performance in air than a chlorinated derivative. The highest mobility, ca. 0.068 cm(2)/V s, was measured for the compound with the most fluorine substituents (i.e., N,N'-diperfluorophenyl-3,4,9,10-perylenetetracarboxylic diimide (8)). The effect of molecular structure on film morphology was observed using an atomic force microscope (AFM). The correlation between the number of fluorine substitutions and the TFT air stability was studied. Our results showed better device air stability for compounds with more fluorine substituents, due to their lower LUMO energy levels. Other factors affecting TFT performance, such as substrate temperature and SiO2 dielectric surface treatment, were also investigated.
25th anniversary article: recent advances in n-type and ambipolar organic field-effect transistors.

Yan Zhao,Yunlong Guo,Yunqi Liu

DOI: https://doi.org/10.1002/adma.201302315

2013-01-01

Abstract:The advantages of organic field-effect transistors, such as low cost, mechanical flexibility and large-area fabrication, make them potentially useful for electronic applications such as flexible switching backplanes for video displays, radio frequency identifications and so on. A large amount of molecules were designed and synthesized for electron transporting (n-type) and ambipolar organic semiconductors with improved performance and stability. In this review, we focus on the advances in performance and molecular design of n-type and ambipolar semiconductors reported in the past few years.
High mobility n-type organic semiconductors with tunable exciton dynamics toward photo-stable and photo-sensitive transistors

Li Yu,Yongxu Hu,Jie Li,Zhongwu Wang,Haoquan Zhang,Yinan Huang,Yunpeng Lou,Yajing Sun,Xueying Lu,Huapeng Liu,Yingshuang Zheng,Shuguang Wang,Xiaosong Chen,Deyang Ji,Liqiang Li,Wenping Hu

DOI: https://doi.org/10.1039/d2tc00705c

IF: 6.4

2022-05-10

Journal of Materials Chemistry C

Abstract:Organic semiconductors (OSCs) are the material basis for various organic optoelectronics, where OSCs are required to possess different exciton dynamics characteristics. Therefore, designing high-mobility OSCs with tunable exciton dynamics toward photo-stable and photo-sensitive optoelectronic applications is of great significance for the organic electronics field. Herein, two novel n-type semiconductors with the same backbone and different halogen substituent groups (PQ-4FP and PQ-4ClP) are synthesized, both of which show excellent n-channel charge transport properties with the mobilities of 2.08 cm2 V-1 s-1 (PQ-4FP) and 2.98 cm2 V-1 s-1 (PQ-4ClP), respectively. Remarkably, single-crystal organic field-effect transistors (SC-OFETs) of PQ-4FP exhibit good photo-stability under the irradiation (white light) of 44.9 mW/cm2, while SC-OFETs of PQ-4ClP show good photo-sensitive characteristics. Through the optical spectrum analysis, it is proved that the photo-stability of PQ-4FP derives from the effective exciton-polaron quenching effect and the photo-sensitivity of PQ-4ClP comes from the efficient exciton dissociation. This work provides a novel and efficient way to design high-mobility n-type OSCs and modulate their optoelectronic properties through molecular structure engineering.

materials science, multidisciplinary,physics, applied
Field‐Effect Transistors: A Cofacially Stacked Electron‐Deficient Small Molecule with a High Electron Mobility of over 10 Cm2 V−1 S−1 in Air (adv. Mater. 48/2015)

Jin‐Hu Dou,Yu‐Qing Zheng,Ze‐Fan Yao,Ting Lei,Xingxing Shen,Xu‐Yi Luo,Zhi‐Ao Yu,Shi‐Ding Zhang,Guangchao Han,Zhi Wang,Yuanping Yi,Jie‐Yu Wang,Jian Pei

DOI: https://doi.org/10.1002/adma.201570334

IF: 29.4

2015-01-01

Advanced Materials

Abstract:Compared with abundant p-type organic semiconductors with high mobilities, n-type semiconductors with mobilities over 1 cm2 V−1 s−1 are rare. On page 8051, Y. Yi, J. Pei, and co-workers report a new small molecule, F4-BDOPV, with unprecedentedly high electron mobilities of up to 12.6 cm2 V−1 s−1. This is the first time that air-stable n-type organic semiconductors have shown mobilities surpassing 10 cm2 V−1 s−1, an important benchmark for practical applications.
High performance, air stable n-type single crystal transistors based on core-tetrachlorinated perylene diimides.

Chunming Liu,Chengyi Xiao,Yan Li,Wenping Hu,Zhibo Li,Zhaohui Wang

DOI: https://doi.org/10.1039/c4cc05896h

IF: 4.9

2014-01-01

Chemical Communications

Abstract:Organic single crystal transistors based on two kinds of core-tetrachlorinated perylene diimides (4ClPDIs) are fabricated. Compared with alkyl substituted 4ClPDI, the transistors based on fluoroalkyl substituted 4ClPDI exhibit an air-stable electron mobility of up to 1.43 cm(2) V-1 s(-1) and high photocurrent with an on/off ratio of 1000, which are associated with its close packing arrangement .
Phthalocyanato Tin(IV) Dichloride: An Air-Stable, High-Performance, n-Type Organic Semiconductor with a High Field-Effect Electron Mobility

De Song,Haibo Wang,Feng Zhu,Junliang Yang,Hongkun Tian,Yanhou Geng,Donghang Yan

DOI: https://doi.org/10.1002/adma.200702439

IF: 29.4

2008-01-01

Advanced Materials

Abstract:Phthalocyanato tin(IV) dichloride, an axially dichloriniated MPc, is an air-stable high performance n-type organic semiconductor with a field-effect electron mobility of up to 0.30 cm(2) V-1 s(-1). This high mobility together with good device stability and commercial availability makes it a most suitable n-type material for future organic thin-film transistor applications.
N-Type Organic Semiconductors in Organic Electronics

John E. Anthony,Antonio Facchetti,Martin Heeney,Seth R. Marder,Xiaowei Zhan

DOI: https://doi.org/10.1002/adma.200903628

IF: 29.4

2010-01-01

Advanced Materials

Abstract:Organic semiconductors have been the subject of intensive academic and commercial interest over the past two decades, and successful commercial devices incorporating them are slowly beginning to enter the market. Much of the focus has been on the development of hole transporting, or p-type, semiconductors that have seen a dramatic rise in performance over the last decade. Much less attention has been devoted to electron transporting, or so called n-type, materials, and in this paper we focus upon recent developments in several classes of n-type materials and the design guidelines used to develop them.
High Performance N-Type Single Crystalline Transistors of Naphthalene Bis(dicarboximide) and Their Anisotropic Transport in Crystals

Aifeng Lv,Yan Li,Wan Yue,Lang Jiang,Huanli Dong,Guangyao Zhao,Qing Meng,Wei Jiang,Yudong He,Zhibo Li,Zhaohui Wang,Wenping Hu

DOI: https://doi.org/10.1039/c2cc31619f

IF: 4.9

2012-01-01

Chemical Communications

Abstract:High-performance n-type organic single crystal transistors of a naphthalene diimide are demonstrated. The accomplished transistors exhibit electron mobility as high as 0.7 cm(2) V-1 s(-1). The anisotropic charge transport in the elongated hexagonal crystals of the naphthalene diimide is also explored. The transport anisotropy along different directions is at least 1.6 (mobility ratio).
Air Stable Organic Salt As an n-Type Dopant for Efficient and Stable Organic Light-Emitting Diodes

Zhengyang Bin,Lian Duan,Yong Qiu

DOI: https://doi.org/10.1021/acsami.5b00839

2015-03-23

Abstract:Air-stable and low-temperature-evaporable n-type dopants are highly desired for efficient and stable organic light-emitting diodes (OLEDs). In this work, 2-(2-Methoxyphenyl)-1,3-dimethyl-1H-benzoimidazol-3-ium iodide (o-MeO-DMBI-I), a thermally decomposable precursor of organic radical o-MeO-DMBI, has been employed as a novel n-type dopant in OLEDs, because of its air stability, low decomposition temperature, and lack of atom diffusion. The n-type electrical doping is evidenced by the rapid increase in current density of electron-only devices and the large improvement in conductivity, originated from increased electron concentration in electron-transport layer (ETL) and reduced electron injection barrier. A highly efficient and stable OLED is created using o-MeO-DMBI as an n-type dopant in Bphen. Compared with the control device with its high-temperature-evaporable n-type dopant cesium carbonate (Cs2CO3), o-MeO-DMBI-doped device showed an incredible boom in current efficiency from 28.6 to 42.2 cd/A. Moreover, the lifetime (T(70%)) of o-MeO-DMBI-doped device is 45 h, more than 20 times longer than that of the Cs2CO3-doped device (2 h). The enhanced efficiency and stability are attributed to the improved balance of holes and electrons in the emissive layer, and the eliminated atom diffusion of cesium.

materials science, multidisciplinary,nanoscience & nanotechnology
High-mobility, Air Stable Bottom-Contact N-Channel Thin Film Transistors Based on N,N′-ditridecyl Perylene Diimide

Lanchao Ma,Yunlong Guo,Yugeng Wen,Yunqi Liu,Xiaowei Zhan

DOI: https://doi.org/10.1063/1.4831971

IF: 4

2013-01-01

Applied Physics Letters

Abstract:Bottom-gate bottom-contact (BGBC) organic thin film transistors (OTFTs) based on N,N′-ditridecyl perylene diimide exhibit electron mobility as high as 3.54 cm2 V−1 s−1 in nitrogen, higher than that (1 cm2 V−1 s−1) of bottom-gate top-contact devices. The better performance of BGBC configuration in N2 is attributed to lower contact resistance, which is further reduced by thermal annealing. After thermally annealing the BGBC OTFTs at 180 °C, electron mobility as high as 3.5 cm2 V−1 s−1, current on/off ratio of 106 and threshold voltage of 9 V are achieved in air, and the mobility retains above 1 cm2 V−1 s−1 after storage for two months in air. Thermal treatment enhanced crystalline grains, reduced grain boundaries, and suppressed the adsorption of H2O and O2, leading to excellent performance in air.
Recent Research Progress of Organic Small‐Molecule Semiconductors with High Electron Mobilities

Jiadi Chen,Weifeng Zhang,Liping Wang,Gui Yu

DOI: https://doi.org/10.1002/adma.202210772

IF: 29.4

2022-12-17

Advanced Materials

Abstract:Organic electronics has made great progress in the past decades, which is inseparable from the innovative development of organic electronic devices and the diversity of organic semiconductor materials. It is worth mentioning that both of these great advances are inextricably linked to the development of organic high‐performance semiconductor materials, especially the representative n‐type organic small‐molecule semiconductor materials with high electron mobilities. The n‐type organic small molecules have the advantages of simple synthesis process, strong intermolecular stacking, tunable molecular structure and easy to functionalized structures. Furthermore, the n‐type semiconductor is a remarkable and important component for constructing complementary logic circuits and p‐n heterojunction structures. Therefore, n‐type organic semiconductors play an extremely important role in the field of organic electronic materials and are the basis for the industrialization of organic electronic functional devices. This review focuses on the modification strategies of organic small molecules with high electron mobility at molecular level, and discusses in detail the applications of n‐type small‐molecule semiconductor materials with high mobility in organic field−effect transistors (OFETs), organic light‐emitting transistors, organic photodetectors, and gas sensors. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
N-type Organic Phototransistors Based on PTCDA Single Crystals for Broadband Imaging

Fengzhe Ling,Qianqian Du,Yanxun Zhang,Xialian Zheng,Anran Wang,Chunhui Zhu,Wenjun Wang,Fengqiu Wang,Shuchao Qin

DOI: https://doi.org/10.1016/j.orgel.2023.106942

IF: 3.868

2023-01-01

Organic Electronics

Abstract:Organic single crystals (OSCs) herald new opportunities for the fabrication of advanced optoelectronic devices, especially for flexible and wearable devices, owing to their unique material properties including high mobility and intrinsic flexibility. Up to now, though the electrical characteristics have been a breakthrough in OSCs, the devices have not been fully optimized for inherent photoelectric properties, and their photoresponse charac-teristics are also scarcely satisfactory, especially for the n-type organic materials. In this work, we prepared a high-performance organic phototransistor employing the air-stable PTCDA single crystal, grown by a simple microspacing in-air sublimation technique. The responsivity and photosensitivity of the device can reach up to 180 A/W and 103 for 532 nm illumination, with also a good response speed (rise and decay times less than 1 and 2 ms). In addition, we demonstrated several high-resolution imaging in this organic transistor. Our results demonstrated that the high-quality n-type organic single crystal is also a promising candidate for future high-performance photodetector and imaging applications.
High-Performance Organic Phototransistors Based on D18, a High-Mobility and Unipolar Polymer

Huihuang Huang,Li Jiang,Jiali Peng,Yiming Qi,Songxue Bai,Qianqian Lin

DOI: https://doi.org/10.1021/acs.chemmater.1c02839

IF: 10.508

2021-10-11

Chemistry of Materials

Abstract:Organic optoelectronics has progressed excitingly in recent years, mainly due to the innovation of donor and acceptor systems. Organic photodetectors based on novel semiconductor materials and well-designed device architectures have also been reported with improved device performance. However, most of them were photodiodes, and it is challenging to integrate them into the well-established readout circuits. Organic phototransistors are mainly based on the hybrid strategy, composed of either hybrid films or multilayer device structures, which complicates charge transfer and charge transport. Most of the organic devices also suffer from poor stability. In this work, we introduce a recently developed p-type copolymer, D18, to fabricate high-performance phototransistors. D18 possesses excellent charge generation, high mobility, and unipolar charge transport, which fulfill the generic design rule of organic phototransistors. The optimized phototransistors based on D18 exhibited extremely low dark current (∼10 pA) and noise (∼10 fA/Hz1/2), a high detectivity of 4 × 1013 Jones, a swift response of <5 ms, and excellent device stability. We also demonstrated flexible phototransistors with decent performance metrics, indicating great potential for next-generation solution-processed photodetectors and flexible electronic devices.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.chemmater.1c02839.TRMC measurements, calculation of mobility based on MIS-CELIV transients, calculation of mobility based on transfer curves, comparison of transfer curves based on various substrates, temperature-dependent output curves, light intensity-dependent output curves, device performance with various active layer thicknesses, responsivity spectrum, and temporal response under various light sources (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical
High-Performance Organic Thin-Film Phototransistors Based on Stacked p-n Heterojunctions for Enhanced Optoelectronic Response

Po-Hsiang Fang,Zhao-Lun Kuo,Yu-Tong Wu,Horng-Long Cheng,Wei-Yang Chou

DOI: https://doi.org/10.1039/d4tc04467c

IF: 6.4

2024-11-29

Journal of Materials Chemistry C

Abstract:This research mainly focuses on utilizing the characteristics of organic semiconductor materials to design and fabricate high-performance organic thin-film phototransistors. The semiconductor materials employed include the n-type semiconductor N, N'-ditridecylperylene-3,4,9,10-tetracarboxydiimide (PTCDI-C 13 ), and the p-type semiconductor pentacene. These p - and n -type semiconductors are arranged in a tandem structure to form the active layer of the device, creating a heterojunction interface. The tandem structure offers the advantage of enabling the device to exhibit excellent light absorption capabilities across the entire visible light spectrum (400-700 nm). When light is illuminated the channel of the active layer, excitons are generated in the semiconductor materials. The heterojunction interface can provide a built-in electric field, which facilitates the dissociation of excitons and charge transport, enabling the photogenerated charge carriers to be effectively collected. This significantly enhances the photosensitivity and photoresponsivity performances, far exceeding that of a single semiconductor layer. Overall, this research has successfully developed a high-performance organic thin-film phototransistor, which has important implications for the development of new optoelectronic devices and applications.

materials science, multidisciplinary,physics, applied

n-Type organic light-emitting transistors with high mobility and improved air stability

A high mobility air-stable n-type organic small molecule semiconductor with high UV–visible-to-NIR photoresponse

High-Performance n-type Polymer Field-effect Transistors with Exceptional Stability

High-performance $n$-type organic field-effect transistors with ionic liquid gates

Molecular n-type doping for air-stable electron transport in vacuum-processed n-channel organic transistors

High Mobility, Air Stable, Organic Single Crystal Transistors of an N-Type Diperylene Bisimide

High-performance floating-gate organic phototransistors based on n-type core-expanded naphthalene diimides

Air Stable N-Channel Organic Semiconductors for Thin Film Transistors Based on Fluorinated Derivatives of Perylene Diimides

25th anniversary article: recent advances in n-type and ambipolar organic field-effect transistors.

High mobility n-type organic semiconductors with tunable exciton dynamics toward photo-stable and photo-sensitive transistors

Field‐Effect Transistors: A Cofacially Stacked Electron‐Deficient Small Molecule with a High Electron Mobility of over 10 Cm2 V−1 S−1 in Air (adv. Mater. 48/2015)

High performance, air stable n-type single crystal transistors based on core-tetrachlorinated perylene diimides.

Phthalocyanato Tin(IV) Dichloride: An Air-Stable, High-Performance, n-Type Organic Semiconductor with a High Field-Effect Electron Mobility

N-Type Organic Semiconductors in Organic Electronics

High Performance N-Type Single Crystalline Transistors of Naphthalene Bis(dicarboximide) and Their Anisotropic Transport in Crystals

Air Stable Organic Salt As an n-Type Dopant for Efficient and Stable Organic Light-Emitting Diodes

High-mobility, Air Stable Bottom-Contact N-Channel Thin Film Transistors Based on N,N′-ditridecyl Perylene Diimide

Recent Research Progress of Organic Small‐Molecule Semiconductors with High Electron Mobilities

N-type Organic Phototransistors Based on PTCDA Single Crystals for Broadband Imaging

High-Performance Organic Phototransistors Based on D18, a High-Mobility and Unipolar Polymer

High-Performance Organic Thin-Film Phototransistors Based on Stacked p-n Heterojunctions for Enhanced Optoelectronic Response