High-Performance n-type Polymer Field-effect Transistors with Exceptional Stability

Manikanta Makala,Maciej Barłóg,Derek Dremann,Salahuddin S. Attar,Edgar Gutierrez Fernandez,Mohammed Al-Hashimi,Oana Jurchescu
DOI: https://doi.org/10.1039/d4tc03294b
IF: 6.4
2024-09-21
Journal of Materials Chemistry C
Abstract:Development of organic field-effect transistors (OFETs) that simultaneously exhibit high-performance and high-stability is critical for complementary integrated circuits and other applications based on organic semiconductors. While progress has been made in enhancing p-channel devices, engineering competitive n-type organic transistors remains a formidable obstacle. Herein, we demonstrate the achievement of high-mobility n-type OFETs with unprecedented operational stability through innovative device and material engineering. Thin film transistors fabricated on donor-acceptor polymers based on indacenodithiazole (IDTz) and diketopyrrolopyrrole (DPP) units exhibit electron mobilities up to 1.3 cm2/Vs, along with a negligible change in mobility, and threshold voltage shift as low as 0.5 V under continuous bias stress of 60 V for both the gate-source and drain-source voltages persisting for more than 1000 min. These remarkable properties position our OFETs as formidable counterparts to p-type transistors, addressing a longstanding challenge in the field.
materials science, multidisciplinary,physics, applied
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