Abstract:Electronic devices based on organic semiconductors offer an attractive alternative to conventional inorganic devices due to potentially lower costs, simpler packaging and compatibility with flexible substrates1,2. As is the case for silicon-based microelectronics, the use of complementary logic elements—requiring n- and p-type semiconductors whose majority charge carriers are electrons and holes, respectively—is expected to be crucial to achieving low-power, high-speed performance. Similarly, the electron-segregating domains of photovoltaic assemblies require both n- and p-type semiconductors3,4,5. Stable organic p-type semiconductors are known6, but practically useful n-type semiconductor materials have proved difficult to develop, reflecting the unfavourable electrochemical properties of known, electron-demanding polymers7. Although high electron mobilities have been obtained for organic materials, these values are usually obtained for single crystals at low temperatures, whereas practically useful field-effect transistors (FETs) will have to be made of polycrystalline films that remain functional at room temperature. A few organic n-type semiconductors that can be used in FETs are known, but these suffer from low electron mobility, poor stability in air and/or demanding processing conditions8,9,10. Here we report a crystallographically engineered naphthalenetetracarboxylic diimide derivative that allows us to fabricate solution-cast n-channel FETs with promising performance at ambient conditions. By integrating our n-channel FETs with solution-deposited p-channel FETs, we are able to produce a complementary inverter circuit whose active layers are deposited entirely from the liquid phase. We expect that other complementary circuit designs11 can be realized by this approach as well.

N-Type Organic Semiconductors in Organic Electronics

n-Type semiconductors for organic electrochemical transistor applications

Recent Progress of N-Type Organic Semiconducting Small Molecules for Organic Field-Effect Transistors

Recent Advances in N-Type and Ambipolar Organic Semiconductors and Their Multi-Functional Applications.

Electron Transporting Semiconducting Polymers in Organic Electronics

25th anniversary article: recent advances in n-type and ambipolar organic field-effect transistors.

Recent progress in the development of n-type organic semiconductors for organic field effect transistors

Recent Research Progress of Organic Small‐Molecule Semiconductors with High Electron Mobilities

n-Type organic semiconducting polymers: stability limitations, design considerations and applications

High Performance N-Type and Ambipolar Small Organic Semiconductors for Organic Thin Film Transistors

A soluble and air-stable organic semiconductor with high electron mobility

Fully‐Fused Indacenodithiophene‐Centered Small Molecule n‐Type Semiconductors for High‐Performance Organic Electronics

Efficient n-Dopants and Their Roles in Organic Electronics

Cyano-functionalized organic and polymeric semiconductors for high-performance n-type organic electronic devices

Recent Developments of n‐Type Organic Thermoelectric Materials: Influence of Structure Modification on Molecule Arrangement and Solution Processing

N-Type Semiconducting Polymers Based on an Bithiophene Imide-Bridged Isoindigo for Organic Field-Effect Transistors

n‐Type Quinoidal Oligothiophene‐Based Semiconductors for Thin‐Film Transistors and Thermoelectrics

Improving Device Performance of n-type Organic Field-Effect Transistors via Doping with p-type Organic Semiconductor

Organic Single Crystals: N‐Type 2D Organic Single Crystals for High‐Performance Organic Field‐Effect Transistors and Near‐Infrared Phototransistors (adv. Mater. 16/2018)

Materials design and applications of n-type and ambipolar organic electrochemical transistors

ChemInform Abstract: High Performance Organic Semiconductors for Field‐Effect Transistors